main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers osd65r1k0: viewers · Ray 23d ago
osd65r1k0-etched.glb Publish 0.1.0 · Ray 23d ago
osd65r1k0-etched.step osd65r1k0: factory component page (tier=lcsc) · Ray 23d ago
osd65r1k0-hero.glb osd65r1k0: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
osd65r1k0-hero.overlay.json Publish 0.1.0 · Ray 23d ago
osd65r1k0.glb Publish 0.1.0 · Ray 23d ago
osd65r1k0.kicad_mod Publish 0.1.0 · Ray 23d ago
osd65r1k0.kicad_sym Publish 0.1.0 · Ray 23d ago
osd65r1k0.lbr Publish 0.1.0 · Ray 23d ago
osd65r1k0.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

OSD65R1K0

OSEN · MOSFETs · TO-252

OSD65R1K0 from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is rated ±30 V continuous, with threshold of 2.0 V min to 4.0 V max at ID=250µA.
2 Drain passive Drain terminal (also the tab); drain-source voltage rated 650 V, continuous drain current 4 A and pulsed 12 A.
3 Source passive Source terminal; continuous body-diode forward current is 4 A max with VSD 1.2 V max at IS=2A.

Key specifications

Parameter Value
Manufacturer OSEN
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V Tc=25°C 2
Gate-Source Voltage-Continuous VGS -30 30 V Tc=25°C 2
Drain Current-Continuous ID 4 A Tc=25°C, Note 2 2
Drain Current-Single Pulsed IDM 12 A Tc=25°C, Note 1 2
Power Dissipation PD 20 W Tc=25°C, Note 2 2
Max. Operating Junction Temperature Tj 150 °C Tc=25°C 2
Drain-Source Breakdown Voltage BVDSS 650 V ID=250µA, VGS=0V, TJ=25°C 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Drain-Source On-Resistance RDS(on) 1000 mΩ VGS=10V, ID=2A 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=650V, VGS=0 2
Continuous Drain-Source Diode Forward Current IS 4 A 3
Diode Forward On-Voltage VSD 1.2 V IS=2A, VGS=0 3
Thermal Resistance, Junction to Case Rth(j-c) 6.25 °C/W 3

CAD (KiCad official)

  • Symbol: OSD65R1K0
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: osd65r1k0-etched.step / osd65r1k0-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osd65r1k0.step / osd65r1k0.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: OSEN datasheet (3 pp, sha256 0f24292290644bd9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF