component
OSD60N04T
Public Made by Adomby adom
OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| osd60n04t-etched.glb | 1d ago |
| osd60n04t-etched.step | 1d ago |
| osd60n04t-hero.glb | 1d ago |
| osd60n04t-hero.overlay.json | 1d ago |
| osd60n04t.glb | 1d ago |
| osd60n04t.kicad_mod | 1d ago |
| osd60n04t.kicad_sym | 1d ago |
| osd60n04t.lbr | 1d ago |
| osd60n04t.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| verification.json | 1d ago |
OSD60N04T
OSEN · MOSFETs · TO-252
OSD60N04T from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input of the N-channel MOSFET; gate-source voltage is rated at ±20 V with a threshold of 1.0 V min to 2.0 V max at ID=250µA. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated 40 V drain-source voltage and 60 A continuous drain current (250 A pulsed). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, carrying up to 60 A continuous current with a 60 A continuous body-diode current rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 7 | 8.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | ID=250µA, VGS=0V | 2 | ||
| Continuous Drain-Source Diode Forward Current | IS | 60 | A | 3 | |||
| Diode Forward On-Voltage | VSD | 1.1 | V | IS=10A, VGS=0 | 3 | ||
| Drain-Source Voltage | VDSS | 40 | V | 2 | |||
| Gate-Source Voltage-Continuous | VGS | -20 | 20 | V | 2 | ||
| Drain Current-Continuous | ID | 60 | A | Note 2 | 2 | ||
| Drain Current-Single Pulsed | IDM | 250 | A | Note 1 | 2 | ||
| Power Dissipation | PD | 65 | W | Note 2 | 2 | ||
| Max. Operating Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.9 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
OSD60N04T - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
osd60n04t-etched.step/osd60n04t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osd60n04t.step/osd60n04t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
3320fcd02d901da3, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).