component
OSD15N10T
Public Made by Adomby adom
OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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OSD15N10T
OSEN · MOSFETs · TO-252
OSD15N10T from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive pin with high input impedance and low-level drive, rated ±20 V gate-source continuous (VGS(th) 1.0 to 2.5 V). |
| 2 | D | passive | Drain; rated 100 V drain-source, 15 A continuous (24 A pulsed), also connected to the tab of the TO-252 package. |
| 3 | S | passive | Source; current return terminal of the N-channel MOSFET, with body diode continuous forward current of 5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -20 | 20 | V | Tc=25°C | 2 | |
| Drain Current-Continuous | ID | 15 | A | Note 2 | 2 | ||
| Drain Current-Single Plused | IDM | 24 | A | Note 1 | 2 | ||
| Power Dissipation | PD | 35 | W | Note 2 | 2 | ||
| Max. Operating junction temperature | Tj | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 80 | 100 | mΩ | VGS=10V, ID=15A | 2 | |
| Gate-Body Leakage Current | IGSS | -10 | 10 | nA | VGS=±16V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=80V, VGS=0 | 2 | ||
| Forward Transconductance | gfs | 3.5 | S | VDS=15V, ID=2.5A | 2 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.57 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
OSD15N10T - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
osd15n10t-etched.step/osd15n10t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osd15n10t.step/osd15n10t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
380c3c4ba7b86d1a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# OSD15N10T
**OSEN** · MOSFETs · TO-252
OSD15N10T from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive pin with high input impedance and low-level drive, rated ±20 V gate-source continuous (VGS(th) 1.0 to 2.5 V). |
| 2 | D | passive | Drain; rated 100 V drain-source, 15 A continuous (24 A pulsed), also connected to the tab of the TO-252 package. |
| 3 | S | passive | Source; current return terminal of the N-channel MOSFET, with body diode continuous forward current of 5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 100 | V | Tc=25°C | 2 |
| Gate-Source Voltage-Continuous | VGS | -20 | | 20 | V | Tc=25°C | 2 |
| Drain Current-Continuous | ID | | | 15 | A | Note 2 | 2 |
| Drain Current-Single Plused | IDM | | | 24 | A | Note 1 | 2 |
| Power Dissipation | PD | | | 35 | W | Note 2 | 2 |
| Max. Operating junction temperature | Tj | -55 | | 150 | ℃ | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 80 | 100 | mΩ | VGS=10V, ID=15A | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | nA | VGS=±16V, VDS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=80V, VGS=0 | 2 |
| Forward Transconductance | gfs | 3.5 | | | S | VDS=15V, ID=2.5A | 2 |
| Thermal Resistance, Junction to Case | Rth(j-c) | | | 3.57 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `OSD15N10T`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `osd15n10t-etched.step` / `osd15n10t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `osd15n10t.step` / `osd15n10t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [OSEN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920581548224512) (3 pp, sha256 `380c3c4ba7b86d1a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/osd15n10t-datasheet.pdf)