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OSD100N10G

OSEN · MOSFETs · TO-252

OSD100N10G from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is rated ±20 V continuous with threshold of 1.0 V min to 2.5 V max at ID=250µA.
2 Drain passive Drain terminal (also the tab); drain-source voltage is rated 100 V and continuous drain current 100 A at Tc=25°C.
3 Source passive Source terminal; continuous body-diode forward current is 100 A max.

Key specifications

Parameter Value
Manufacturer OSEN
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage-Continuous VGS -20 20 V 2
Drain Current-Continuous (Note 2) ID 100 A 2
Drain Current-Single Plused (Note 1) IDM 400 A 2
Power Dissipation (Note 2) PD 150 W 2
Max. Operating junction temperature Tj 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 100 V ID=250µA,VGS=0V,TJ=25°C 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 6 8 mΩ VGS=10V,ID=40A 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0 2
Forward Transconductance gfs 25 S VDS=55V,ID=20A 2
Total Gate Charge Qg 56 nC VDS=50V,VGS=10V,ID=10A(Note 2) 3
Gate-Source Charge Qgs 15 nC VDS=50V,VGS=10V,ID=10A(Note 2) 3
Gate-Drain Charge Qgd 10 nC VDS=50V,VGS=10V,ID=10A(Note 2) 3
Continuous Drain-Source Diode Forward Current (Note 2) IS 100 A 3
Diode Forward On-Voltage VSD 1.3 V IS=30A,VGS=0 3
Thermal Resistance, Junction to Case Rth(j-c) 0.83 ℃/W 3
Turn-On Delay Time Td(on) 25 ns VDS=55V,ID=10A,RG=2Ω,VGS=10V(Note 2) 3
Rise Time Tr 10 ns VDS=55V,ID=10A,RG=2Ω,VGS=10V(Note 2) 3
Turn-Off Delay Time Td(off) 70 ns VDS=55V,ID=10A,RG=2Ω,VGS=10V(Note 2) 3
Fall Time Tf 45 ns VDS=55V,ID=10A,RG=2Ω,VGS=10V(Note 2) 3
Input Capacitance Ciss 3505 pF VDS=25V,VGS=0,f=1MHz 3
Output Capacitance Coss 580 pF VDS=25V,VGS=0,f=1MHz 3
Reverse Transfer Capacitance Crss 15 pF VDS=25V,VGS=0,f=1MHz 3

CAD (KiCad official)

  • Symbol: OSD100N10G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: osd100n10g-etched.step / osd100n10g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osd100n10g.step / osd100n10g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: OSEN datasheet (3 pp, sha256 238b3bffcacb7fb0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF