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OSD100N06T

Public Made by Adom

by adom

OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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osd100n06t-etched.glb Publish 0.1.0 · Ray 16d ago
osd100n06t-etched.step osd100n06t: factory component page (tier=lcsc) · Ray 16d ago
osd100n06t-hero.glb osd100n06t: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
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osd100n06t.lbr Publish 0.1.0 · Ray 16d ago
osd100n06t.step Publish 0.1.0 · Ray 16d ago
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OSD100N06T

OSEN · MOSFETs · TO-252

OSD100N06T from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is rated at ±20 V continuous with a gate threshold of 2.0 V to 4.0 V at ID=250µA.
2 Drain passive Drain terminal (also the tab); drain-source voltage is rated at 60 V with 100 A continuous drain current and 400 A pulsed.
3 Source passive Source terminal; the body diode carries up to 100 A continuous forward current with a 0.8 V maximum forward voltage at IS=20A.

Key specifications

Parameter Value
Manufacturer OSEN
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage-Continuous VGS -20 20 V 2
Drain Current-Continuous (Note 2) ID 100 A 2
Drain Current-Single Plused (Note 1) IDM 400 A 2
Power Dissipation (Note 2) PD 110 W 2
Max. Operating junction temperature Tj 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 60 V ID=250µA, VGS=0V, TJ=25°C 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Drain-Source On-Resistance RDS(on) 6 8 mΩ VGS=10V, ID=20A 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=55V, VGS=0 2
Forward Transconductance gfs 40 S VDS=25V, ID=45A 2
Total Gate Charge Qg 155 nC VDS=25V, VGS=10V, ID=62A (Note 2) 3
Gate-Source Charge Qgs 35 nC 3
Gate-Drain Charge Qgd 15 nC 3
Continuous Drain-Source Diode Forward Current (Note 2) IS 100 A 3
Diode Forward On-Voltage VSD 0.8 V IS=20A, VGS=0 3
Thermal Resistance, Junction to Case Rth(j-c) 1.14 ℃/W 3

CAD (KiCad official)

  • Symbol: OSD100N06T
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: osd100n06t-etched.step / osd100n06t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osd100n06t.step / osd100n06t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: OSEN datasheet (3 pp, sha256 1dc0629fc316e32f, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF