# OPA861IDBVT

**Texas Instruments** · Special Purpose Amplifiers · SOT-23-6

OPA861IDBVT from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IQ Adjust | passive | An external resistor on this pin adjusts the OTA transconductance, trading bandwidth, quiescent current and gain (test conditions use RADJ = 250Ω). |
| 2 | -VS | power_in | Negative power supply pin; the datasheet shows V- = -5V and gives an absolute maximum total power supply of ±6.5VDC. |
| 3 | B | input | High-impedance base input with a B-input voltage range of ±4.2V typical at +25°C and ±3.6V minimum over temperature. |
| 4 | E | bidirectional | Low-impedance emitter input/output with E-output voltage compliance of ±4.2V typical and E-output current of ±9mA minimum over temperature; pin 4 is rated above 500V HBM ESD. |
| 5 | C | output | Current output (collector) with C-output voltage compliance of ±4.7V typical at +25°C and ±3.9V minimum over temperature, and C-output current of ±9mA minimum over temperature. |
| 6 | +VS | power_in | Positive power supply pin; the datasheet shows V+ = +5V and gives an absolute maximum total power supply of ±6.5VDC. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-6 |
| Category | Amplifiers/Comparators |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Bandwidth |  | 77 | 80 |  | MHz | VS=±5V; RL=500Ω, RADJ=250Ω; G=+5, VO=200mVPP, RL=500Ω; @+25°C | 3 |
| Slew Rate |  | 860 | 900 |  | V/µs | VS=±5V; G=+5, VO=5V step; @+25°C | 3 |
| 2nd-Harmonic Distortion |  |  | -68 | -55 | dB | VS=±5V; G=+5, VO=2VPP, 5MHz, RL=500Ω; @+25°C | 3 |
| 3rd-Harmonic Distortion |  |  | -57 | -52 | dB | VS=±5V; G=+5, VO=2VPP, 5MHz, RL=500Ω; @+25°C | 3 |
| Base Input Voltage Noise |  |  | 2.4 | 3 | nV/√Hz | VS=±5V; f > 100kHz; @+25°C | 3 |
| Base Input Current Noise |  |  | 1.7 | 2.4 | pA/√Hz | VS=±5V; f > 100kHz; @+25°C | 3 |
| Emitter Input Current Noise |  |  | 5.2 | 15.3 | pA/√Hz | VS=±5V; f > 100kHz; @+25°C | 3 |
| Minimum OTA Transconductance (gm) | gm | 80 | 95 |  | mA/V | VS=±5V; VO=±10mV, RC=50Ω, RE=0Ω; @+25°C | 3 |
| Maximum OTA Transconductance (gm) | gm |  | 95 | 150 | mA/V | VS=±5V; VO=±10mV, RC=50Ω, RE=0Ω; @+25°C | 3 |
| B-Input Offset Voltage |  | -12 | 3 | 12 | mV | VS=±5V; VB=0V, RC=0Ω, RE=100Ω; @+25°C | 3 |
| Average B-Input Offset Voltage Drift |  | -120 | 67 | 120 | μV/°C | VS=±5V; VB=0V, RC=0Ω, RE=100Ω | 3 |
| B-Input Bias Current |  | -5 | 1 | 5 | μA | VS=±5V; VB=0V, RC=0Ω, RE=100Ω; @+25°C | 3 |
| Average B-Input Bias Current Drift |  | -25 | 20 | 25 | nA/°C | VS=±5V; VB=0V, RC=0Ω, RE=100Ω | 3 |
| E-Input Bias Current |  | -100 | 30 | 100 | μA | VS=±5V; VB=0V, VC=0V; @+25°C | 3 |
| Average E-Input Bias Current Drift |  | -600 | 500 | 600 | nA/°C | VS=±5V; VB=0V, VC=0V | 3 |
| C-Output Bias Current |  | -18 | 5 | 18 | μA | VS=±5V; VB=0V, VC=0V; @+25°C | 3 |
| Average C-Output Bias Current Drift |  | -300 | 250 | 300 | nA/°C | VS=±5V; VB=0V, VC=0V | 3 |
| B-Input Voltage Range |  | 3.7 | 4.2 |  | V | VS=±5V; @+25°C; printed ±3.7 as magnitude | 3 |
| Min E-Input Resistance |  |  | 10.5 | 12.5 | Ω | VS=±5V; @+25°C | 3 |
| Max E-Input Resistance |  | 6.7 | 10.5 |  | Ω | VS=±5V; @+25°C | 3 |
| E-Output Voltage Compliance |  | 3.7 | 4.2 |  | V | VS=±5V; IE=±1mA; @+25°C; printed ±3.7 as magnitude | 3 |
| E-Output Current, Sinking/Sourcing |  | 10 | 15 |  | mA | VS=±5V; VE=0; @+25°C; printed ±10 as magnitude | 3 |
| C-Output Voltage Compliance |  | 4 | 4.7 |  | V | VS=±5V; IC=±1mA; @+25°C; printed ±4.0 as magnitude | 3 |
| C-Output Current, Sinking/Sourcing |  | 10 | 15 |  | mA | VS=±5V; VC=0; @+25°C; printed ±10 as magnitude | 3 |
| Maximum Operating Voltage |  |  |  | 6.3 | V | VS=±5V; @+25°C | 4 |
| Minimum Operating Voltage |  | 2 |  |  | V | VS=±5V; @+25°C | 4 |
| Maximum Quiescent Current |  |  | 5.4 | 5.9 | mA | VS=±5V; RADJ=250Ω; @+25°C | 4 |
| Minimum Quiescent Current |  | 4.9 | 5.4 |  | mA | VS=±5V; RADJ=250Ω; @+25°C | 4 |
| OTA Power-Supply Rejection Ratio (+PSRR) | ΔIC/ΔVS | -50 | 20 | 50 | µA/V | VS=±5V; @+25°C | 4 |
| Bandwidth |  | 72 | 73 |  | MHz | VS=+5V; RL=500Ω to VS/2, RADJ=250Ω; G=+5, VO=200mVPP, RL=500Ω; @+25°C | 5 |
| Slew Rate |  | 395 | 410 |  | V/µs | VS=+5V; G=+5, VO=2.5V step; @+25°C | 5 |
| Minimum OTA Transconductance (gm) | gm | 70 | 85 |  | mA/V | VS=+5V; VO=±10mV, RC=50Ω, RE=0Ω; @+25°C | 5 |
| Maximum OTA Transconductance (gm) | gm |  | 85 | 140 | mA/V | VS=+5V; VO=±10mV, RC=50Ω, RE=0Ω; @+25°C | 5 |
| B-Input Offset Voltage |  | -12 | 3 | 12 | mV | VS=+5V; VB=0V, RC=0Ω, RE=100Ω; @+25°C | 5 |
| Average B-Input Offset Voltage Drift |  | -120 | 67 | 120 | μV/°C | VS=+5V; VB=0V, RC=0Ω, RE=100Ω | 5 |
| B-Input Bias Current |  | -5 | 1 | 5 | μA | VS=+5V; VB=0V, RC=0Ω, RE=100Ω; @+25°C | 5 |
| Average B-Input Bias Current Drift |  | -25 | 20 | 25 | nA/°C | VS=+5V; VB=0V, RC=0Ω, RE=100Ω | 5 |
| E-Input Bias Current |  | -100 | 30 | 100 | μA | VS=+5V; VB=0V, VC=0V; @+25°C | 5 |
| Average E-Input Bias Current Drift |  | -600 | 500 | 600 | nA/°C | VS=+5V; VB=0V, VC=0V | 5 |
| Most Positive B-Input Voltage |  | 3.7 | 4.2 |  | V | VS=+5V; @+25°C | 5 |
| Least Positive B-Input Voltage |  |  | 0.8 | 1.3 | V | VS=+5V; @+25°C | 5 |
| Maximum E-Output Voltage Compliance |  | 3.7 | 4.2 |  | V | VS=+5V; IE=±1mA; @+25°C | 5 |
| Minimum E-Output Voltage Compliance |  |  | 0.8 | 1.3 | V | VS=+5V; IE=±1mA; @+25°C | 5 |
| E-Output Current, Sinking/Sourcing |  | 7 | 8 |  | mA | VS=+5V; VE=0; @+25°C; printed ±7 as magnitude | 5 |
| Maximum C-Output Voltage Compliance |  | 4 | 4.7 |  | V | VS=+5V; IC=±1mA; @+25°C | 5 |
| Minimum C-Output Voltage Compliance |  |  | 0.3 | 1 | V | VS=+5V; IC=±1mA; @+25°C | 5 |
| C-Output Current, Sinking/Sourcing |  | 7 | 8 |  | mA | VS=+5V; VC=0; @+25°C; printed ±7 as magnitude | 5 |
| Maximum Operating Voltage |  |  |  | 12.6 | V | VS=+5V; @+25°C | 6 |
| Minimum Operating Voltage |  | 4 |  |  | V | VS=+5V; @+25°C | 6 |
| Maximum Quiescent Current |  |  | 4.7 | 5.2 | mA | VS=+5V; RADJ=250Ω; @+25°C | 6 |
| Minimum Quiescent Current |  | 4.2 | 4.7 |  | mA | VS=+5V; RADJ=250Ω; @+25°C | 6 |
| OTA Power-Supply Rejection Ratio (+PSRR) | ΔIC/ΔVS | -50 | 20 | 50 | µA/V | VS=+5V; @+25°C | 6 |
| Power Supply |  | -6.5 |  | 6.5 | VDC |  | 2 |
| Differential Input Voltage |  | -1.2 |  | 1.2 | V |  | 2 |
| Storage Temperature Range |  | -65 |  | 125 | °C |  | 2 |
| Lead Temperature |  |  |  | 260 | °C | soldering, 10s | 2 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Specified Temperature Range |  | -45 |  | 85 | °C | Ordering table, SPECIFIED TEMPERATURE RANGE; thermal section prints -40 to +85 | 2 |
| Thermal Resistance, Junction-to-Ambient (DBV SOT23-6) | θJA |  | 150 |  | °C/W |  | 4 |

## CAD (KiCad official)

- Symbol: `OPA861IDBVT`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `opa861idbvt-etched.step` / `opa861idbvt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `opa861idbvt.step` / `opa861idbvt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/opa861) (34 pp, sha256 `efd2849555c4cb71`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/opa861idbvt-datasheet.pdf)