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OP262GSZ-REEL7

Analog Devices · Operational Amplifier · SOIC-8

OP262GSZ-REEL7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT A output Output of amplifier A, which swings to within 60 mV of each supply rail at 5 mA load; the output is not short-circuit protected and must not be forced to source or sink more than about 30 mA.
2 -IN A input Inverting input of amplifier A; the input voltage should be limited to ±6 V and the input current to less than 5 mA using an external series resistor.
3 +IN A input Non-inverting input of amplifier A; the common-mode input range extends from ground to within 1 V of the positive supply.
4 V- power_in Negative power supply; the device operates from a single supply as low as 2.7 V (referenced to this pin) or from dual supplies up to ±6 V.
5 +IN B input Non-inverting input of amplifier B; the common-mode input range extends from ground to within 1 V of the positive supply.
6 -IN B input Inverting input of amplifier B; the input voltage should be limited to ±6 V and the input current to less than 5 mA using an external series resistor.
7 OUT B output Output of amplifier B, which swings to within 60 mV of each supply rail at 5 mA load; the output is not short-circuit protected and must not be forced to source or sink more than about 30 mA.
8 V+ power_in Positive power supply; the device operates from a single supply of 2.7 V to 12 V or dual supplies up to ±6 V.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage VOS 45 325 µV OP162G, OP262G, OP462G 3
Input Offset Voltage over temperature VOS 800 µV -40°C ≤ TA ≤ +125°C 3
Input Bias Current IB 360 600 nA 3
Input Bias Current over temperature IB 650 nA -40°C ≤ TA ≤ +125°C 3
Input Offset Current IOS -25 2.5 25 nA 3
Input Offset Current over temperature IOS -40 40 nA -40°C ≤ TA ≤ +125°C 3
Input Voltage Range VCM 0 4 V 3
Common-Mode Rejection CMRR 70 110 dB 0 V ≤ VCM ≤ 4.0 V, -40°C ≤ TA ≤ +125°C 3
Large Signal Voltage Gain AVO 30 V/mV RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V 3
Large Signal Voltage Gain AVO 65 88 V/mV RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V 3
Large Signal Voltage Gain over temperature AVO 40 V/mV RL = 10 kΩ, -40°C ≤ TA ≤ +125°C 3
Long-Term Offset Voltage VOS 600 µV G grade 3
Offset Voltage Drift ΔVOS/ΔT 1 µV/°C 3
Bias Current Drift ΔIB/ΔT 250 pA/°C 3
Output Voltage Swing High VOH 4.95 4.99 V IL = 250 µA, -40°C ≤ TA ≤ +125°C 3
Output Voltage Swing High VOH 4.85 4.94 V IL = 5 mA 3
Output Voltage Swing Low VOL 14 50 mV IL = 250 µA, -40°C ≤ TA ≤ +125°C 3
Output Voltage Swing Low VOL 65 150 mV IL = 5 mA 3
Short-Circuit Current ISC -80 80 mA Short to ground 3
Maximum Output Current IOUT -30 30 mA 3
Power Supply Rejection Ratio PSRR 120 dB VS = 2.7 V to 7 V 3
Power Supply Rejection Ratio over temperature PSRR 90 dB -40°C ≤ TA ≤ +125°C 3
Supply Current/Amplifier ISY 500 700 µA OP262, OP462, VOUT = 2.5 V 3
Supply Current/Amplifier over temperature ISY 850 µA -40°C ≤ TA ≤ +125°C 3
Slew Rate SR 10 V/µs 1 V < VOUT < 4 V, RL = 10 kΩ 3
Settling Time tS 540 ns To 0.1%, AV = -1, VO = 2 V step 3
Gain Bandwidth Product GBP 15 MHz 3
Phase Margin φm 61 Degrees 3
Voltage Noise (peak-to-peak) en p-p 0.5 µV p-p 0.1 Hz to 10 Hz 3
Voltage Noise Density en 9.5 nV/√Hz f = 1 kHz 3
Current Noise Density in 0.4 pA/√Hz f = 1 kHz 3
Supply Voltage (absolute maximum) VS -6 6 V Printed as ±6 V 6
Input Voltage (absolute maximum) VIN -6 6 V Printed as ±6 V; for supplies above 6 V input limited to supply voltage 6
Differential Input Voltage (absolute maximum) VID -0.6 0.6 V Printed as ±0.6 V; input current limited to less than 5 mA above 0.6 V 6
Storage Temperature Range TSTG -65 150 °C 6
Operating Temperature Range TA -40 125 °C 6
Junction Temperature Range TJ -65 150 °C 6
Lead Temperature Range 300 °C Soldering, 10 sec 6
Thermal Resistance Junction-to-Ambient θJA 157 °C/W 8-Lead SOIC (S), device soldered in circuit board 6
Thermal Resistance Junction-to-Case θJC 56 °C/W 8-Lead SOIC (S) 6
Supply Voltage Range VS 3 12 V Dual-supply equivalent printed as (±1.5) to (±6) 5

CAD (KiCad official)

  • Symbol: OP262GSZ-REEL7
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: op262gsz-reel7-etched.step / op262gsz-reel7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); op262gsz-reel7.step / op262gsz-reel7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (20 pp, sha256 07ec7633d2004ae1, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF