main
History Download
Ray Publish 0.1.0 c23d550 7h ago

NX7002BKWX

Nexperia · MOSFETs · SOT-323

NX7002BKWX from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; gate-source voltage is limited to -20 V to 20 V at Tj = 25 °C.
2 S passive Source of the MOSFET; source current is limited to 200 mA at Tamb = 25 °C.
3 D passive Drain of the MOSFET; drain-source voltage is limited to 60 V and drain current to 330 mA at Tsp = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID 330 mA VGS = 10 V; Tsp = 25 °C 3
Drain current ID 240 mA VGS = 10 V; Tamb = 25 °C; footnote [1] FR4 PCB, mounting pad for drain 1 cm2 3
Drain current ID 150 mA VGS = 10 V; Tamb = 100 °C; footnote [1] 3
Peak drain current IDM 0.8 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 265 mW Tamb = 25 °C; footnote [2] standard footprint 3
Total power dissipation Ptot 322 mW footnote [1] FR4 PCB, mounting pad for drain 1 cm2 3
Total power dissipation Ptot 1449 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 200 mA Tamb = 25 °C; footnote [1] 3
Drain-source breakdown voltage V(BR)DSS 60 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 1.1 1.6 2.1 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 1 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 0.3 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -0.3 µA VGS = -5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2.2 2.8 Ω VGS = 10 V; ID = 200 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 4.5 5.7 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 2.5 3.2 Ω VGS = 5 V; ID = 200 mA; Tj = 25 °C 6
Source-drain voltage VSD 0.87 1.2 V IS = 200 mA; VGS = 0 V; Tj = 25 °C 6
Thermal resistance junction to ambient (standard footprint, in free air) Rth(j-a) 410 470 K/W in free air; footnote [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 4
Thermal resistance junction to ambient (mounting pad for drain 1 cm2) Rth(j-a) 340 390 K/W in free air; footnote [2] FR4 PCB, mounting pad for drain 1 cm2 4
Thermal resistance junction to solder point Rth(j-sp) 75 85 K/W 4

CAD (KiCad official)

  • Symbol: NX7002BKWX
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: nx7002bkwx-etched.step / nx7002bkwx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nx7002bkwx.step / nx7002bkwx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 19cff603b535f171, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF