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Ray Publish 0.1.0 d4c846b 13d ago

NX7002BKMYL

Nexperia · MOSFETs · SOT-883

NX7002BKMYL from Nexperia, in a SOT-883. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the datasheet gives no further pin-level limits beyond the absolute maximum VGS of -20 V to 20 V (Table 5).
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no further pin-level limits.
3 D passive Drain terminal of the N-channel MOSFET; the datasheet gives VDS of 60 V maximum and ID of 350 mA at Tamb = 25 °C (Table 5), with the mounting pad for drain specified for the thermal conditions.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-883
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID 350 mA VGS = 10 V; Tamb = 25 °C [1] 3
Drain current ID 200 mA VGS = 10 V; Tamb = 100 °C [1] 3
Peak drain current IDM 0.9 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 350 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 680 mW [1] 3
Total power dissipation Ptot 3100 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 200 mA Tamb = 25 °C [1] 3
Drain-source breakdown voltage V(BR)DSS 60 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 1.1 1.6 2.1 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 1 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 0.3 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -0.3 µA VGS = -5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2.2 2.8 Ω VGS = 10 V; ID = 200 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 4.5 5.7 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 2.5 3.2 Ω VGS = 5 V; ID = 200 mA; Tj = 25 °C 6
Source-drain voltage VSD 0.87 1.2 V IS = 200 mA; VGS = 0 V; Tj = 25 °C 6
Junction to ambient thermal resistance (standard footprint) Rth(j-a) 314 360 K/W in free air; [1] 4
Junction to ambient thermal resistance (mounting pad for drain 1 cm2) Rth(j-a) 159 180 K/W in free air; [2] 4
Junction to solder point thermal resistance Rth(j-sp) 35 40 K/W 4

CAD (KiCad official)

  • Symbol: NX7002BKMYL
  • Footprint: Package_TO_SOT_SMD:SOT-883
  • 3D model: SOT-883, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.45 mm nominal SOT height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: nx7002bkmyl-etched.step / nx7002bkmyl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nx7002bkmyl.step / nx7002bkmyl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 bda035dc0e90893e, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF