component
NX7002AKVL
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nx7002akvl: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
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16d ago
NX7002AKVL
Nexperia · MOSFETs · SOT-23
NX7002AKVL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits the gate-source voltage VGS to -20 V to 20 V (Table 5). |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet gives a maximum source current IS of 190 mA at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet gives a maximum drain-source voltage VDS of 60 V (Table 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 1.1 | 1.6 | 2.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Drain leakage current | IDSS | 10 | µA | VDS = 60 V; VGS = 0 V; Tj = 150 °C | 6 | ||
| Gate leakage current | IGSS | 2 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -2 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 0.5 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -0.5 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 100 | nA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -100 | nA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 3 | 4.5 | Ω | VGS = 10 V; ID = 100 mA; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 6.2 | 9.2 | Ω | VGS = 10 V; ID = 100 mA; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 3.7 | 5.2 | Ω | VGS = 5 V; ID = 100 mA; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 0.33 | 0.43 | nC | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; Tj = 25 °C | 6 | |
| Input capacitance | Ciss | 15 | 20 | pF | VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| Turn-on delay time | td(on) | 6 | 12 | ns | VDS = 40 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Turn-off delay time | td(off) | 11 | 20 | ns | VDS = 40 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | 0.47 | 0.8 | 1.2 | V | IS = 115 mA; VGS = 0 V; Tj = 25 °C | 6 |
| Drain-source voltage | VDS | 60 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 300 | mA | VGS = 10 V; Tsp = 25 °C | 3 | ||
| Drain current | ID | 190 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 120 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | 760 | mA | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 265 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 325 | mW | [1] | 3 | ||
| Total power dissipation | Ptot | 1330 | mW | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 190 | mA | Tamb = 25 °C [1] | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 410 | 470 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 330 | 380 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 | 4 | |
| Thermal resistance from junction to solder point | Rth(j-sp) | 95 | K/W | 4 |
CAD (KiCad official)
- Symbol:
NX7002AKVL - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nx7002akvl-etched.step/nx7002akvl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nx7002akvl.step/nx7002akvl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
ecccdfc4703105bf, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NX7002AKVL
**Nexperia** · MOSFETs · SOT-23
NX7002AKVL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits the gate-source voltage VGS to -20 V to 20 V (Table 5). |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet gives a maximum source current IS of 190 mA at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet gives a maximum drain-source voltage VDS of 60 V (Table 5). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 1.1 | 1.6 | 2.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 10 | µA | VDS = 60 V; VGS = 0 V; Tj = 150 °C | 6 |
| Gate leakage current | IGSS | | | 2 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -2 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 0.5 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -0.5 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 100 | nA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -100 | nA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 3 | 4.5 | Ω | VGS = 10 V; ID = 100 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 6.2 | 9.2 | Ω | VGS = 10 V; ID = 100 mA; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon | | 3.7 | 5.2 | Ω | VGS = 5 V; ID = 100 mA; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) | | 0.33 | 0.43 | nC | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| Input capacitance | Ciss | | 15 | 20 | pF | VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Turn-on delay time | td(on) | | 6 | 12 | ns | VDS = 40 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Turn-off delay time | td(off) | | 11 | 20 | ns | VDS = 40 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | 0.47 | 0.8 | 1.2 | V | IS = 115 mA; VGS = 0 V; Tj = 25 °C | 6 |
| Drain-source voltage | VDS | | | 60 | V | | 3 |
| Gate-source voltage | VGS | -20 | | 20 | V | Tj = 25 °C | 3 |
| Drain current | ID | | | 300 | mA | VGS = 10 V; Tsp = 25 °C | 3 |
| Drain current | ID | | | 190 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID | | | 120 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM | | | 760 | mA | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot | | | 265 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot | | | 325 | mW | [1] | 3 |
| Total power dissipation | Ptot | | | 1330 | mW | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Source current | IS | | | 190 | mA | Tamb = 25 °C [1] | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 410 | 470 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 330 | 380 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 | 4 |
| Thermal resistance from junction to solder point | Rth(j-sp) | | | 95 | K/W | | 4 |
## CAD (KiCad official)
- Symbol: `NX7002AKVL`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nx7002akvl-etched.step` / `nx7002akvl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nx7002akvl.step` / `nx7002akvl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885364961890304) (16 pp, sha256 `ecccdfc4703105bf`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nx7002akvl-datasheet.pdf)