# NX6008NBKWX

**Nexperia** · MOSFETs · SOT-323

NX6008NBKWX from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to -8 V to 8 V at Tj = 25 °C. |
| 2 | S | passive | Source of the N-channel MOSFET; source current IS is limited to 250 mA at Tamb = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage VDS is limited to 60 V and drain current ID to 250 mA at Tamb = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 60 | V |  | 3 |
| Gate-source voltage | VGS | -8 |  | 8 | V | Tj = 25 °C | 3 |
| Drain current | ID |  |  | 250 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID |  |  | 160 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM |  |  | 1 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot |  |  | 270 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot |  |  | 300 | mW | [1] | 3 |
| Total power dissipation | Ptot |  |  | 1.5 | W | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| Ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| Source current | IS |  |  | 250 | mA | Tamb = 25 °C [1] | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) |  | 410 | 470 | K/W | [1] | 5 |
| Thermal resistance from junction to ambient | Rth(j-a) |  | 360 | 414 | K/W | [2] | 5 |
| Thermal resistance from junction to solder point | Rth(j-sp) |  |  | 85 | K/W |  | 5 |
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 0.4 | 0.6 | 0.9 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS |  |  | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 10 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | -10 | µA | VGS = -8 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 1 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | -1 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 100 | nA | VGS = 2.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | -100 | nA | VGS = -2.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 2 | 2.8 | Ω | VGS = 4.5 V; ID = 300 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 4.4 | 6.1 | Ω | VGS = 4.5 V; ID = 300 mA; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 2.1 | 2.9 | Ω | VGS = 2.5 V; ID = 200 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 2.3 | 3.2 | Ω | VGS = 1.8 V; ID = 50 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 2.8 | 4 | Ω | VGS = 1.5 V; ID = 10 mA; Tj = 25 °C | 6 |
| Source-drain voltage | VSD |  | 0.7 | 1.2 | V | IS = 250 mA; VGS = 0 V; Tj = 25 °C | 6 |
| Forward transconductance | gfs |  | 1 |  | S | VDS = 5 V; ID = 300 mA; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) |  | 0.4 | 0.7 | nC |  | 6 |
| Gate-source charge | QGS |  | 0.03 |  | nC |  | 6 |
| Gate-drain charge | QGD |  | 0.11 |  | nC | VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| Input capacitance | Ciss |  | 27 |  | pF |  | 6 |
| Output capacitance | Coss |  | 3 |  | pF |  | 6 |
| Reverse transfer capacitance | Crss |  | 2 |  | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Turn-on delay time | td(on) |  | 1 |  | ns | VDS = 30 V; ID = 300 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Rise time | tr |  | 2 |  | ns | VDS = 30 V; ID = 300 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Turn-off delay time | td(off) |  | 5 |  | ns | VDS = 30 V; ID = 300 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Fall time | tf |  | 3 |  | ns | VDS = 30 V; ID = 300 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |

## CAD (KiCad official)

- Symbol: `NX6008NBKWX`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `nx6008nbkwx-etched.step` / `nx6008nbkwx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nx6008nbkwx.step` / `nx6008nbkwx.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/NX6008NBKWX.pdf) (14 pp, sha256 `21680c8a744e9712`, retrieved 2026-10-29, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nx6008nbkwx-datasheet.pdf)