# NX138AKMYL

**Nexperia** · MOSFETs · SOT-883

NX138AKMYL from Nexperia, in a SOT-883. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level compatible with VGS rated ±20 V (max) and threshold voltage of 0.8 V min to 1.5 V max at ID = 250 µA. |
| 2 | S | passive | Source terminal of the N-channel Trench MOSFET; continuous source current up to 0.27 A at Tamb = 25 °C. |
| 3 | D | passive | Drain; rated for VDS up to 60 V and continuous drain current of 0.27 A at VGS = 10 V, Tamb = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-883 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 60 | V |  | 3 |
| Gate-source voltage | VGS | -20 |  | 20 | V | Tj = 25 °C | 3 |
| Drain current | ID |  |  | 0.27 | A | VGS = 10 V; Tamb = 25 °C | 3 |
| Drain current | ID |  |  | 0.17 | A | VGS = 10 V; Tamb = 100 °C | 3 |
| Peak drain current | IDM |  |  | 1.08 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot |  |  | 340 | mW | Tamb = 25 °C; standard footprint | 3 |
| Total power dissipation | Ptot |  |  | 648 | mW | Tamb = 25 °C; drain pad 1 cm2 | 3 |
| Total power dissipation | Ptot |  |  | 2.3 | W | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| Ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| Source current | IS |  |  | 0.27 | A | Tamb = 25 °C | 3 |
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) |  | 317 | 365 | K/W | in free air; standard footprint | 5 |
| Thermal resistance junction to ambient (1 cm2 drain pad) | Rth(j-a) |  | 168 | 193 | K/W | in free air; drain pad 1 cm2 | 5 |
| Thermal resistance junction to solder point | Rth(j-sp) |  | 47 | 54 | K/W |  | 5 |
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 0.8 | 1.1 | 1.5 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS |  |  | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 2 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | -2 |  |  | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 0.5 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | -0.5 |  |  | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 100 | nA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | -100 |  |  | nA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 2.8 | 4.2 | Ω | VGS = 10 V; ID = 0.19 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 6.2 | 9.2 | Ω | VGS = 10 V; ID = 0.19 A; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 3 | 4.5 | Ω | VGS = 5 V; ID = 0.17 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 4 | 8 | Ω | VGS = 2.5 V; ID = 0.13 A; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) |  | 0.4 | 0.6 | nC | VDS = 30 V; ID = 0.2 A; VGS = 10 V; Tj = 25 °C | 6 |
| Source-drain voltage | VSD |  | 0.8 | 1.2 | V | IS = 0.26 A; VGS = 0 V; Tj = 25 °C | 6 |
| Forward transconductance | gfs |  | 0.4 |  | S | VDS = 5 V; ID = 0.19 A; Tj = 25 °C | 6 |
| Gate-source charge | QGS |  | 0.03 |  | nC | VDS = 30 V; ID = 0.2 A; VGS = 10 V; Tj = 25 °C | 6 |
| Gate-drain charge | QGD |  | 0.08 |  | nC | VDS = 30 V; ID = 0.2 A; VGS = 10 V; Tj = 25 °C | 6 |
| Input capacitance | Ciss |  | 15 |  | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Output capacitance | Coss |  | 2 |  | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Reverse transfer capacitance | Crss |  | 1.3 |  | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Turn-on delay time | td(on) |  | 1 |  | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Rise time | tr |  | 1 |  | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Turn-off delay time | td(off) |  | 3 |  | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Fall time | tf |  | 8 |  | ns | VDS = 30 V; ID = 0.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |

## CAD (KiCad official)

- Symbol: `NX138AKMYL`
- Footprint: `Package_TO_SOT_SMD:SOT-883`
- 3D model: SOT-883, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.45 mm nominal SOT height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `nx138akmyl-etched.step` / `nx138akmyl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nx138akmyl.step` / `nx138akmyl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/NX138AKMYL.pdf) (14 pp, sha256 `7127e4c0ebc228bf`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nx138akmyl-datasheet.pdf)