component
NVTJD4001NT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| nvtjd4001nt1g-etched.glb | 23d ago |
| nvtjd4001nt1g-etched.step | 23d ago |
| nvtjd4001nt1g-hero.glb | 23d ago |
| nvtjd4001nt1g-hero.overlay.json | 23d ago |
| nvtjd4001nt1g.glb | 23d ago |
| nvtjd4001nt1g.kicad_mod | 23d ago |
| nvtjd4001nt1g.kicad_sym | 23d ago |
| nvtjd4001nt1g.lbr | 23d ago |
| nvtjd4001nt1g.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
NVTJD4001NT1G
onsemi · MOSFETs · SOT-363
NVTJD4001NT1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (dual N-channel, 30 V VDSS, 250 mA continuous drain current at TA = 25 °C). |
| 2 | G1 | input | Gate of MOSFET 1; the gate is ESD protected and VGS is limited to ±20 V. |
| 3 | D2 | passive | Drain of MOSFET 2; drain-to-source voltage is rated at 30 V maximum. |
| 4 | S2 | passive | Source of MOSFET 2 (dual N-channel, 30 V VDSS, 250 mA continuous drain current at TA = 25 °C). |
| 5 | G2 | input | Gate of MOSFET 2; the gate is ESD protected and VGS is limited to ±20 V. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-to-source voltage is rated at 30 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0 V, ID = 100 A | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VGS = 0 V, VDS = 30 V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -1 | 1 | A | VDS = 0 V, VGS = ±10 V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1.2 | 1.5 | V | VGS = VDS, ID = 100 A | 2 |
| Drain-to-Source On Resistance | RDS(on) | 1 | 1.5 | Ω | VGS = 4.0 V, ID = 10 mA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 1.5 | 2.5 | Ω | VGS = 2.5 V, ID = 10 mA | 2 | |
| Input Capacitance | CISS | 20 | 33 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 2 | |
| Output Capacitance | COSS | 19 | 32 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 2 | |
| Reverse Transfer Capacitance | CRSS | 7.25 | 12 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 2 | |
| Total Gate Charge | QG(TOT) | 0.9 | 1.3 | nC | VGS = 5.0 V, VDS = 24 V, ID = 0.1 A | 2 | |
| Forward Diode Voltage TJ = 25°C | VSD | 0.65 | 0.7 | V | VGS = 0 V, IS = 10 mA, TJ = 25°C | 2 | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ | 56 | mV/°C | 2 | |||
| Gate Threshold Temperature Coefficient | VGS(TH)/TJ | -3.2 | mV/°C | 2 | |||
| Forward Transconductance | gFS | 80 | mS | VDS = 3.0 V, ID = 10 mA | 2 | ||
| Threshold Gate Charge | QG(TH) | 0.2 | nC | 2 | |||
| Gate-to-Source Charge | QGS | 0.3 | nC | 2 | |||
| Gate-to-Drain Charge | QGD | 0.2 | nC | 2 | |||
| Turn-On Delay Time | td(ON) | 17 | ns | VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA, RG = 50 Ω | 2 | ||
| Rise Time | tr | 23 | ns | 2 | |||
| Turn-Off Delay Time | td(OFF) | 94 | ns | 2 | |||
| Fall Time | tf | 82 | ns | 2 | |||
| Forward Diode Voltage TJ = 125°C | VSD | 0.45 | V | VGS = 0 V, IS = 10 mA, TJ = 125°C | 2 | ||
| Reverse Recovery Time | tRR | 12.4 | ns | VGS = 0 V, dIS/dt = 8.0 A/s, IS = 10 mA | 2 | ||
| Drain-to-Source Voltage | VDSS | 30 | V | TJ = 25°C | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, steady state | ID | 250 | mA | Steady state, TA = 25 °C | 1 | ||
| Continuous Drain Current, steady state | ID | 180 | mA | Steady state, TA = 85 °C | 1 | ||
| Power Dissipation, steady state | PD | 272 | mW | Steady state, TA = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 600 | mA | t = 10 s | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | 250 | mA | 1 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 inch from case for 10 s | 1 | ||
| Junction-to-Ambient, Steady State | RJA | 458 | °C/W | Surface mounted on FR4, min pad (Cu 0.155 in sq, 1 oz) | 1 | ||
| Junction-to-Lead, Steady State | RJL | 252 | °C/W | Surface mounted on FR4, min pad (Cu 0.155 in sq, 1 oz) | 1 |
CAD (KiCad official)
- Symbol:
NVTJD4001NT1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
nvtjd4001nt1g-etched.step/nvtjd4001nt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvtjd4001nt1g.step/nvtjd4001nt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
74a68128b1d28ab7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).