component
NVR5198NLT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NVR5198NLT1G
onsemi · MOSFETs · SOT-23
NVR5198NLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates gate-to-source voltage VGS at ±20 V. |
| 2 | Source | passive | Source terminal; the datasheet rates source (body diode) current IS at 1.9 A. |
| 3 | Drain | passive | Drain terminal; the datasheet rates drain-to-source voltage VDSS at 60 V and continuous drain current ID at 2.2 A (steady state, TA = 25°C, RθJ-mb). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.5 | 2.5 | V | VGS = VDS, ID = 250 µA | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 107 | 155 | mΩ | VGS = 10 V, ID = 1 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 142 | 205 | mΩ | VGS = 4.5 V, ID = 1 A | 2 | |
| Forward Diode Voltage | VSD | 0.8 | 1.2 | V | VGS = 0 V, IS = 1 A, TJ = 25°C | 2 | |
| Drain-to-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | Printed as ±20 V | 1 | |
| Continuous Drain Current | ID | 2.2 | A | Steady state, RθJ-mb, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 1.6 | A | Steady state, RθJ-mb, TA = 100°C | 1 | ||
| Power Dissipation | PD | 1.5 | W | RθJ-mb, TA = 25°C | 1 | ||
| Power Dissipation | PD | 0.6 | W | RθJ-mb, TA = 100°C | 1 | ||
| Continuous Drain Current | ID | 1.7 | A | Steady state, RθJA, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 1.2 | A | Steady state, RθJA, TA = 100°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | RθJA, TA = 25°C | 1 | ||
| Power Dissipation | PD | 0.4 | W | RθJA, TA = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 27 | A | TA = 25°C, tp = 10 µs | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | 1.9 | A | 1 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Lead #3 - Drain | RθJ-mb | 86 | °C/W | Notes 2 and 3 | 2 | ||
| Junction-to-Ambient - Steady State | RθJA | 139 | °C/W | Note 3, surface-mounted on FR4, 650 mm² 2 oz Cu pad | 2 |
CAD (KiCad official)
- Symbol:
NVR5198NLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nvr5198nlt1g-etched.step/nvr5198nlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvr5198nlt1g.step/nvr5198nlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
505b22a90f59d6b1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NVR5198NLT1G
**onsemi** · MOSFETs · SOT-23
NVR5198NLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates gate-to-source voltage VGS at ±20 V. |
| 2 | Source | passive | Source terminal; the datasheet rates source (body diode) current IS at 1.9 A. |
| 3 | Drain | passive | Drain terminal; the datasheet rates drain-to-source voltage VDSS at 60 V and continuous drain current ID at 2.2 A (steady state, TA = 25°C, RθJ-mb). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate Threshold Voltage | VGS(TH) | 1.5 | | 2.5 | V | VGS = VDS, ID = 250 µA | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 107 | 155 | mΩ | VGS = 10 V, ID = 1 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 142 | 205 | mΩ | VGS = 4.5 V, ID = 1 A | 2 |
| Forward Diode Voltage | VSD | | 0.8 | 1.2 | V | VGS = 0 V, IS = 1 A, TJ = 25°C | 2 |
| Drain-to-Source Voltage | VDSS | | | 60 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | Printed as ±20 V | 1 |
| Continuous Drain Current | ID | | | 2.2 | A | Steady state, RθJ-mb, TA = 25°C | 1 |
| Continuous Drain Current | ID | | | 1.6 | A | Steady state, RθJ-mb, TA = 100°C | 1 |
| Power Dissipation | PD | | | 1.5 | W | RθJ-mb, TA = 25°C | 1 |
| Power Dissipation | PD | | | 0.6 | W | RθJ-mb, TA = 100°C | 1 |
| Continuous Drain Current | ID | | | 1.7 | A | Steady state, RθJA, TA = 25°C | 1 |
| Continuous Drain Current | ID | | | 1.2 | A | Steady state, RθJA, TA = 100°C | 1 |
| Power Dissipation | PD | | | 0.9 | W | RθJA, TA = 25°C | 1 |
| Power Dissipation | PD | | | 0.4 | W | RθJA, TA = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 27 | A | TA = 25°C, tp = 10 µs | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Source Current (Body Diode) | IS | | | 1.9 | A | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Lead #3 - Drain | RθJ-mb | | | 86 | °C/W | Notes 2 and 3 | 2 |
| Junction-to-Ambient - Steady State | RθJA | | | 139 | °C/W | Note 3, surface-mounted on FR4, 650 mm² 2 oz Cu pad | 2 |
## CAD (KiCad official)
- Symbol: `NVR5198NLT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nvr5198nlt1g-etched.step` / `nvr5198nlt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nvr5198nlt1g.step` / `nvr5198nlt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586189000965439488) (6 pp, sha256 `505b22a90f59d6b1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nvr5198nlt1g-datasheet.pdf)