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NVMFS6B05NLT1G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNVMFS6B05NLT1G-VB
VBsemi Elec · MOSFETs · DFN5x6-8
NVMFS6B05NLT1G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; Vgs is rated at ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; Vgs is rated at ±20 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; continuous source current (diode conduction) is 170 A, package limited. |
| 4 | G | input | Gate terminal; maximum gate-source voltage is ±20 V. |
| 5 | D | passive | Drain terminal; drain-source breakdown voltage is 100 V minimum. |
| 6 | D | passive | Drain terminal; drain-source breakdown voltage is 100 V minimum. |
| 7 | D | passive | Drain terminal; drain-source breakdown voltage is 100 V minimum. |
| 8 | D | passive | Drain terminal; continuous drain current is 105 A at TC = 25 °C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 30V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 30V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.01 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.006 | Ω | VGS = 4.5 V, ID = 35 A | 2 | ||
| Forward Transconductance | gfs | 60 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Pulsed Current | ISM | 315 | A | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 60 | A | TJ = 175 °C, TC = 100 °C, package limited | 1 | ||
| Pulsed Drain Current | IDM | 315 | A | TC = 25 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 170 | A | TC = 25 °C | 1 | ||
| Avalanche Current | IAS | 60 | A | 1 | |||
| Single Avalanche Energy | EAS | 110 | mJ | Duty Cycle ≤ 1 %, L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 15 | 18 | °C/W | t ≤ 10 sec | 1 | |
| Maximum Junction-to-Ambient | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Input Capacitance | Ciss | 11000 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 470 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 225 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 17 | nC | VDS = 100 V, VGS = 10 V, ID = 50 A | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS = 100 V, VGS = 10 V, ID = 50 A | 2 | ||
| Reverse Recovery Time | trr | 135 | ns | IF = 20 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
NVMFS6B05NLT1G-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
nvmfs6b05nlt1g-vb-etched.step/nvmfs6b05nlt1g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvmfs6b05nlt1g-vb.step/nvmfs6b05nlt1g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
7bb7dbd8f177ea28, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).