component
NVMFS5113PLT1G-TP
Public Made by Adomby adom
TECH PUBLIC MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NVMFS5113PLT1G-TP
TECH PUBLIC · MOSFETs · DFN5x6-8L
NVMFS5113PLT1G-TP from TECH PUBLIC, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (pin 1 marked on the package drawing), with drain-source voltage rated -60 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with the other source pins, with continuous drain current rated -65 A at TC=25C. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with the other source pins, with pulsed drain current rated -280 A. |
| 4 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated ±20 V and threshold VGS(th) of -1.2 V min to -2.4 V max at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated -60 V and continuous drain current -65 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with the other drain pins, with RDS(ON) of 11 mOhm typ at VGS=-10 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with the other drain pins, with RDS(ON) of 13 mOhm typ at VGS=-4.5 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with the other drain pins, with power dissipation rated 110 W at TC=25C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
NVMFS5113PLT1G-TP - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
nvmfs5113plt1g-tp-etched.step/nvmfs5113plt1g-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvmfs5113plt1g-tp.step/nvmfs5113plt1g-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TECH PUBLIC datasheet (5 pp, sha256
7cd29e54c59ae659, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NVMFS5113PLT1G-TP
**TECH PUBLIC** · MOSFETs · DFN5x6-8L
NVMFS5113PLT1G-TP from TECH PUBLIC, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (pin 1 marked on the package drawing), with drain-source voltage rated -60 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with the other source pins, with continuous drain current rated -65 A at TC=25C. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with the other source pins, with pulsed drain current rated -280 A. |
| 4 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated ±20 V and threshold VGS(th) of -1.2 V min to -2.4 V max at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated -60 V and continuous drain current -65 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with the other drain pins, with RDS(ON) of 11 mOhm typ at VGS=-10 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with the other drain pins, with RDS(ON) of 13 mOhm typ at VGS=-4.5 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with the other drain pins, with power dissipation rated 110 W at TC=25C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `NVMFS5113PLT1G-TP`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `nvmfs5113plt1g-tp-etched.step` / `nvmfs5113plt1g-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nvmfs5113plt1g-tp.step` / `nvmfs5113plt1g-tp.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TECH PUBLIC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603091433129988096) (5 pp, sha256 `7cd29e54c59ae659`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nvmfs5113plt1g-tp-datasheet.pdf)