NVH4L070N120M3S from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	D	passive	Drain, connected to the tab; VDSS is 1200 V and continuous drain current is 34 A at TC=25°C.
2	S2	passive	Power Source, which carries the main drain-source current path (body diode source current IS 31 A at TC=25°C).
3	S1	passive	Driver Source (Kelvin source), the return for the gate drive; recommended gate voltage is -3/+18 V.
4	G	input	Gate, with absolute maximum VGS of -10/+22 V and recommended operating VGS of -3/+18 V.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-247-4L
Category	Silicon Carbide (SiC) Devices
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Voltage	VDSS			1200	V	TJ = 25°C	1
Gate-to-Source Voltage	VGS	-10		22	V	TJ = 25°C	1
Recommended Gate-to-Source Voltage	VGSop	-3		18	V	TC<175°C	1
Continuous Drain Current	ID			34	A	Steady state, TC=25°C	1
Continuous Drain Current	ID			24	A	Steady state, TC=100°C	1
Power Dissipation	PD			160	W	TC=25°C	1
Power Dissipation	PD			80	W	TC=100°C	1
Pulsed Drain Current	IDM			98	A	TC = 25°C	1
Operating Junction and Storage Temperature	TJ, Tstg	-55		175	°C		1
Source Current (Body Diode)	IS			31	A	TC = 25°C, VGS = −3 V	1
Single Pulse Avalanche Energy	EAS			91	mJ	TJ = 25°C; L = 1 mH, IAS = 13.5 A, VDD = 100 V, VGS = 18 V	1
Maximum Lead Temperature for Soldering	TL			270	°C	1/25" from case for 10 s	1
Junction-to-Case Thermal Resistance	RθJC			0.94	°C/W	Steady state	2
Junction-to-Ambient Thermal Resistance	RθJA			40	°C/W	Steady state	2
Drain-to-Source Breakdown Voltage	V(BR)DSS	1200			V	VGS = 0 V, ID = 1 mA	2
Zero Gate Voltage Drain Current	IDSS			100	uA	VGS = 0 V, VDS = 1200 V, TJ = 25°C	2
Gate-to-Source Leakage Current	IGSS	-1		1	uA	VGS = +22/−10 V, VDS = 0 V	2
Gate Threshold Voltage	VGS(TH)	2.04	2.9	4.4	V	VGS = VDS, ID = 7 mA	2
Recommended Gate Voltage	VGOP	-3		18	V		2
Drain-to-Source On Resistance	RDS(on)		65	87	mOhm	VGS = 18 V, ID = 15 A, TJ = 25°C	2
Continuous Source-Drain Diode Forward Current	ISD			31	A	VGS = −3 V, TC = 25°C (Note 6)	2
Pulsed Source-Drain Diode Forward Current	ISDM			98	A		2
Breakdown Voltage Temperature Coefficient	V(BR)DSS/TJ		0.3		V/°C	ID = 1 mA, referenced to 25°C (Note 6)	2
Drain-to-Source On Resistance at 175°C	RDS(on)		136		mOhm	VGS = 18 V, ID = 15 A, TJ = 175°C (Note 6)	2
Forward Transconductance	gFS		12		S	VDS = 10 V, ID = 15 A (Note 6)	2
Input Capacitance	CISS		1230		pF	VGS = 0 V, f = 1 MHz, VDS = 800 V	2
Output Capacitance	COSS		57		pF	VGS = 0 V, f = 1 MHz, VDS = 800 V	2
Reverse Transfer Capacitance	CRSS		5		pF	VGS = 0 V, f = 1 MHz, VDS = 800 V	2
Total Gate Charge	QG(TOT)		57		nC	VGS = −3/18 V, VDS = 800 V, ID = 15 A	2
Threshold Gate Charge	QG(TH)		3.2		nC	VGS = −3/18 V, VDS = 800 V, ID = 15 A	2
Gate-to-Source Charge	QGS		9.6		nC	VGS = −3/18 V, VDS = 800 V, ID = 15 A	2
Gate-to-Drain Charge	QGD		17		nC	VGS = −3/18 V, VDS = 800 V, ID = 15 A	2
Gate Resistance	RG		4.3		Ohm	f = 1 MHz	2
Turn-On Delay Time	td(ON)		9.2		ns	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Rise Time	tr		11		ns	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Turn-Off Delay Time	td(OFF)		29		ns	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Fall Time	tf		8.8		ns	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Turn-On Switching Loss	EON		124		uJ	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Turn-Off Switching Loss	EOFF		36		uJ	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Total Switching Loss	Etot		160		uJ	VGS = −3/18 V, VDS = 800 V, ID = 15 A, RG = 4.7 Ohm, inductive load	2
Forward Diode Voltage	VSD		4.7		V	VGS = −3 V, ISD = 15 A, TJ = 25°C	2
Reverse Recovery Time	tRR		14.4		ns	VGS = −3/18 V, ISD = 15 A, dIS/dt = 1000 A/us, VDS = 800 V (Note 6)	3
Reverse Recovery Charge	QRR		60		nC	VGS = −3/18 V, ISD = 15 A, dIS/dt = 1000 A/us, VDS = 800 V (Note 6)	3
Reverse Recovery Energy	EREC		4.8		uJ	VGS = −3/18 V, ISD = 15 A, dIS/dt = 1000 A/us, VDS = 800 V (Note 6)	3
Peak Reverse Recovery Current	IRRM		8.4		A	VGS = −3/18 V, ISD = 15 A, dIS/dt = 1000 A/us, VDS = 800 V (Note 6)	3
Charge Time	TA		7.9		ns	VGS = −3/18 V, ISD = 15 A, dIS/dt = 1000 A/us, VDS = 800 V (Note 6)	3
Discharge Time	TB		6.5		ns	VGS = −3/18 V, ISD = 15 A, dIS/dt = 1000 A/us, VDS = 800 V (Note 6)	3

CAD (KiCad official)

Symbol: NVH4L070N120M3S
Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
3D model: TO-247-4L (KiCad packages3D, STEP)
3D model files: nvh4l070n120m3s-etched.step / nvh4l070n120m3s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvh4l070n120m3s.step / nvh4l070n120m3s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (8 pp, sha256 445fb364f44a7571, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

NVH4L070N120M3S

Verified NVH4L070N120M3S

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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