component
NVH4L040N120M3S
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onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+40@@ -0,0 +1,40 @@+# NVH4L040N120M3S++**onsemi** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L++NVH4L040N120M3S from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate control input; recommended gate-source operating voltage VGS(op) = -3 to +18 V for TC < 175°C |+| 2 | D | passive | Drain connection; rated for maximum V(BR)DSS = 1200 V and continuous ID = 54 A at TC = 25°C |+| 3 | S2 | power_in | Power Source main connection providing source return path for switched current to ground; rated 45 A continuous source current at TC = 25°C |+| 4 | S1 | power_in | Driver Source connection for gate driver circuit ground reference and current sensing return |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | onsemi |+| Package | TO-247-4L |+| Category | Silicon Carbide (SiC) Devices |+| Pins | 4 |++## CAD (KiCad official)++- Symbol: `NVH4L040N120M3S`+- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`+- 3D model: TO-247-4L (KiCad packages3D, STEP)+- 3D model files: `nvh4l040n120m3s-etched.step` / `nvh4l040n120m3s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nvh4l040n120m3s.step` / `nvh4l040n120m3s.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/nvh4l040n120m3s-d.pdf) (8 pp, sha256 `9a6cb5d99f12a765`, retrieved 2026-09-18, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/nvh4l040n120m3s-datasheet.pdf)
page.jsonadded+119@@ -0,0 +1,119 @@+{+ "slug": "nvh4l040n120m3s",+ "version": "0.1.0",+ "type": "component",+ "description": "onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "silicon carbide (sic) devices",+ "nvh4l040n120m3s",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "nvh4l040n120m3s.kicad_sym",+ "nvh4l040n120m3s.kicad_mod",+ "nvh4l040n120m3s.glb",+ "nvh4l040n120m3s.step",+ "nvh4l040n120m3s.lbr",+ "docs/hero.png",+ "docs/nvh4l040n120m3s-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "NVH4L040N120M3S",+ "manufacturer": "onsemi",+ "package": "TO-247-4L",+ "pin_count": 4,+ "category": "Silicon Carbide (SiC) Devices",+ "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+ "datasheet": "https://www.onsemi.com/pdf/datasheet/nvh4l040n120m3s-d.pdf",+ "parts": {+ "symbol": "nvh4l040n120m3s.kicad_sym",+ "footprint": "nvh4l040n120m3s.kicad_mod",+ "model_3d": "nvh4l040n120m3s-etched.glb",+ "model_3d_plain": "nvh4l040n120m3s.glb",+ "model_3d_step": "nvh4l040n120m3s-etched.step",+ "model_3d_step_plain": "nvh4l040n120m3s.step",+ "lbr": "nvh4l040n120m3s.lbr"+ },+ "distributor_links": {+ "lcsc": "C19673852"+ },+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate control input; recommended gate-source operating voltage VGS(op) = -3 to +18 V for TC < 175°C"+ },+ {+ "number": "2",+ "name": "D",+ "type": "passive",+ "description": "Drain connection; rated for maximum V(BR)DSS = 1200 V and continuous ID = 54 A at TC = 25°C"+ },+ {+ "number": "3",+ "name": "S2",+ "type": "power_in",+ "description": "Power Source main connection providing source return path for switched current to ground; rated 45 A continuous source current at TC = 25°C"+ },+ {+ "number": "4",+ "name": "S1",+ "type": "power_in",+ "description": "Driver Source connection for gate driver circuit ground reference and current sensing return"+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.2",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.2",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-4-6",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: Specific numeric pin assignments (1–4) are not explicitly documented in the datasheet text provided."+ ],+ "pages_sent": 8,+ "cost_usd": 0.2349,+ "at": "2026-09-18T00:11:39"+ },+ "datasheet": {+ "url": "https://www.onsemi.com/pdf/datasheet/nvh4l040n120m3s-d.pdf",+ "pages": 8,+ "sha256": "9a6cb5d99f12a765",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}