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NVH4L020N120SC1

onsemi · MOSFETs · TO-247-4L

NVH4L020N120SC1 from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel SiC MOSFET, rated for V(BR)DSS of 1200 V minimum and a continuous drain current of 101 A at TC = 25°C.
2 S2 passive Power Source, the main source terminal that carries the drain current (ID 101 A at TC = 25°C).
3 S1 passive Kelvin Source, the separate source connection used as the gate-drive return.
4 G input Gate, with an absolute maximum of -15/+25 V and a recommended drive of -5/+20 V relative to source.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-4L
Category Triode/MOS Tube/Transistor
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 1200 V 1
Gate-to-Source Voltage VGS -15 25 V 1
Recommended Operation Values of Gate-to-Source Voltage VGSop -5 20 V TC < 175°C 1
Continuous Drain Current (Note 2), Steady State ID 101 A TC = 25°C 1
Power Dissipation (Note 2) PD 500 W 1
Continuous Drain Current (Notes 1, 2), Steady State ID 71.4 A TC = 100°C 1
Power Dissipation (Notes 1, 2) PD 250 W 1
Pulsed Drain Current (Note 3) IDM 408 A TA = 25°C 1
Single Pulse Surge Drain Current Capability IDSC 807 A TA = 25°C, tp = 10 s, RG = 4.7 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Source Current (Body Diode) IS 46 A 1
Single Pulse Drain-to-Source Avalanche Energy (Note 4) EAS 264 mJ IL(pk) = 23 A, L = 1 mH 1
Maximum Lead Temperature for Soldering TL 300 °C 1/8 in from case for 5 s 1
Junction-to-Case Thermal Resistance, Steady State (Note 2) RJC 0.3 °C/W Steady State (Note 2) 2
Junction-to-Ambient Thermal Resistance, Steady State (Notes 1, 2) RJA 40 °C/W Steady State (Notes 1, 2) 2
Drain-to-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, ID = 1 mA 2
Zero Gate Voltage Drain Current IDSS 100 A VGS = 0 V, VDS = 1200 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 1 mA VGS = 0 V, VDS = 1200 V, TJ = 175°C 2
Gate-to-Source Leakage Current IGSS -1 1 A VGS = +25/−15 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 1.8 2.7 4.3 V VGS = VDS, ID = 20 mA 2
Recommended Gate Voltage VGOP -5 20 V 2
Drain-to-Source On Resistance RDS(on) 20 28 m VGS = 20 V, ID = 60 A, TJ = 25°C 2
Drain-to-Source On Resistance RDS(on) 37 50 m VGS = 20 V, ID = 60 A, TJ = 175°C 2
Turn-On Delay Time td(ON) 21.6 35 ns VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2, Inductive load 2
Rise Time tr 21 34 ns VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2, Inductive load 2
Turn-Off Delay Time td(OFF) 41 66 ns VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2, Inductive load 2
Fall Time tf 10 20 ns VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2, Inductive load 2
Continuous Drain-Source Diode Forward Current ISD 46 A VGS = −5 V, TJ = 25°C 2
Pulsed Drain-Source Diode Forward Current (Note 3) ISDM 408 A 2

CAD (KiCad official)

  • Symbol: NVH4L020N120SC1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: nvh4l020n120sc1-etched.step / nvh4l020n120sc1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvh4l020n120sc1.step / nvh4l020n120sc1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 601ada656e5ff80e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF