NVD5414NT4G-VB

{
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  "type": "component",
  "slug": "nvd5414nt4g-vb",
  "title": "NVD5414NT4G-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "NVD5414NT4G-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603134949008687104",
    "parts": {
      "symbol": "nvd5414nt4g-vb.kicad_sym",
      "footprint": "nvd5414nt4g-vb.kicad_mod",
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      "model_3d_step_plain": "nvd5414nt4g-vb.step",
      "lbr": "nvd5414nt4g-vb.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated gate input controlling the MOSFET channel. VGS absolute maximum ±20 V; typical gate threshold VGS(th) = 2.0 V (1.0-3.0 V). Total gate charge Qg ≈ 11 nC at VGS = 10 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. High-side power terminal of the N-channel MOSFET. Rated V(BR)DSS = 60 V, continuous ID = 45 A (TC = 25 °C). Electrically connected to the exposed tab (pin 4) of the TO-252 package."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. Low-side power terminal of the N-channel MOSFET. Continuous source (body-diode) current IS = 23 A; diode forward voltage VSD ≈ 1.0 V typical at IF = 15 A."
      },
      {
        "number": "4",
        "name": "D (TAB)",
        "type": "passive",
        "description": "Drain tab. Exposed metal pad on the back of the TO-252 package used for PCB heat-sinking; internally connected to the Drain (pin 2). Solder to a copper pour for thermal dissipation (RthJC = 3.2 °C/W typical)."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603134949008687104",
        "pages": null,
        "sha256": "619572703e282dca",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
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          9.9,
          6.5,
          2.32
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-07",
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        "file": "nvd5414nt4g-vb-etched.step",
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "7409dde72da58aa1f666a9e8d65c83a7f2a231df6918c25e8e49d70607217cf5",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
    }
  },
  "variants": [
    {
      "mpn": "NVD5414NT4G-VB",
      "kind": "packaging"
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  "discovery_pitch": "NVD5414NT4G-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "visibility": {
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  "updated_at": "2026-09-25T03:22:24.975Z"
}