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NV25640DWHFT3G

Public Made by Adom

by adom

onsemi EEPROM, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NV25640DWHFT3G

onsemi · EEPROM · SOIC-8

NV25640DWHFT3G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS input Chip select input enables and disables the device; SO is tri-stated and the device enters Standby when CS is high (unless an internal write is in progress), and each session must start with a high-to-low and end with a low-to-high CS transition.
2 SO tri_state Serial data output shifts data out on the falling edge of SCK in SPI modes (0,0) and (1,1) and is high impedance when CS is high or during HOLD.
3 WP input Write protect input allows all write operations when held high; when low with WPEN set to 1, writing to the Status Register is disabled.
4 VSS power_in Ground reference for the device.
5 SI input Serial data input accepts op-codes, addresses and data, latched on the rising edge of SCK.
6 SCK input Serial clock input provided by the host to synchronize communication between host and device.
7 HOLD input HOLD pauses serial communication when taken low while SCK is low and resumes when taken high while SCK is low; when unused it should be tied to VCC directly or through a resistor.
8 VCC power_in Power supply, 2.5 V to 5.5 V supply voltage range.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Temperature -45 150 °C 2
Storage Temperature -65 150 °C 2
Voltage on any Pin with Respect to Ground -0.5 6.5 V Note 1 2
Endurance NEND 4e+06 Write Cycles TA ≤ 25°C 2
Endurance NEND 1.2e+06 Write Cycles TA = 85°C 2
Endurance NEND 600000 Write Cycles TA = 125°C 2
Endurance NEND 300000 Write Cycles TA = 150°C 2
Data Retention TDR 200 Year TA = 25°C 2
Supply Current (Read) ICCW 3 mA Read, SO open, fSCK = 10 MHz 2
Supply Current (Write Mode) ICCW 2 mA Write, CS = VCC 2
Standby Current ISB1 3 µA VIN = GND or VCC, CS = VCC, WP = VCC, HOLD = VCC, VCC = 5.5 V, TA = −40°C to +125°C 2
Standby Current ISB1 7 µA VIN = GND or VCC, CS = VCC, WP = VCC, HOLD = VCC, VCC = 5.5 V, TA = −40°C to +150°C 2
Standby Current ISB2 5 µA VIN = GND or VCC, CS = VCC, WP = GND, HOLD = GND, VCC = 5.5 V, TA = −40°C to +125°C 2
Standby Current ISB2 10 µA VIN = GND or VCC, CS = VCC, WP = GND, HOLD = GND, VCC = 5.5 V, TA = −40°C to +150°C 2
Input Leakage Current IL -2 2 µA VIN = GND or VCC 2
Output Leakage Current ILO -2 2 µA CS = VCC, VOUT = GND or VCC 2
Input Low Voltage VIL1 -0.5 V 2
Output Low Voltage VOL1 0.4 V IOL = 3.0 mA 2
Internal Power-On Reset Threshold VPORth 0.6 1.5 V 2
Output Capacitance (SO) COUT 8 pF TA = 25°C, f = 1.0 MHz, VCC = +5.0 V, VOUT = 0 V 3
Input Capacitance (CS, SCK, SI, WP, HOLD) CIN 8 pF TA = 25°C, f = 1.0 MHz, VCC = +5.0 V, VIN = 0 V 3
Clock Frequency fSCK 10 MHz VCC 2.5 V, −40°C to +150°C 3
Data Setup Time tSU 10 ns VCC 2.5 V, −40°C to +150°C 3
Data Hold Time tH 10 ns VCC 2.5 V, −40°C to +150°C 3
SCK High Time tWH 40 ns VCC 2.5 V, −40°C to +150°C 3
SCK Low Time tWL 40 ns VCC 2.5 V, −40°C to +150°C 3
HOLD to Output Low Z tLZ 25 ns VCC 2.5 V, −40°C to +150°C 3
Input Rise Time tRI 2 µs VCC 2.5 V, −40°C to +150°C; Note 5 3
Input Fall Time tFI 2 µs VCC 2.5 V, −40°C to +150°C; Note 5 3
HOLD Setup Time tHD 0 ns VCC 2.5 V, −40°C to +150°C 3
HOLD Hold Time tCD 10 ns VCC 2.5 V, −40°C to +150°C 3
Output Valid from Clock Low tV 40 ns VCC 2.5 V, −40°C to +150°C 3
Output Hold Time tHO 0 ns VCC 2.5 V, −40°C to +150°C 3
Output Disable Time tDIS 20 ns VCC 2.5 V, −40°C to +150°C 3
HOLD to Output High Z tHZ 25 ns VCC 2.5 V, −40°C to +150°C 3
CS High Time tCS 40 ns VCC 2.5 V, −40°C to +150°C 3
CS Setup Time tCSS 30 ns VCC 2.5 V, −40°C to +150°C 3
CS Hold Time tCSH 30 ns VCC 2.5 V, −40°C to +150°C 3
CS Inactive Setup Time tCNS 30 ns VCC 2.5 V, −40°C to +150°C 3
CS Inactive Hold Time tCNH 30 ns VCC 2.5 V, −40°C to +150°C 3
Write Cycle Time tWC 4 ms Note 6 3
Power-up to Read Operation tPUR 0.35 ms Notes 5, 7 3
Power-up to Write Operation tPUW 0.35 ms Notes 5, 7 3
Supply Voltage VCC 2.5 5.5 V 2
Operating Temperature Range (Grade 0) TA -40 150 °C 2

CAD (KiCad official)

  • Symbol: NV25640DWHFT3G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: nv25640dwhft3g-etched.step / nv25640dwhft3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nv25640dwhft3g.step / nv25640dwhft3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (14 pp, sha256 425450b19c04faa9, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF