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Contents

README

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NUP4202W1T2G-MS

MSKSEMI · ESD And Surge Protection (TVS/ESD) · SOT-363

NUP4202W1T2G-MS from MSKSEMI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O 1 bidirectional Data/power line I/O 1 is protected by the device, with a 5.0 V reverse stand-off (VRWM) and 100 W peak pulse power (8/20 µs).
2 GND power_in Ground reference for the ESD/surge clamp; the datasheet gives no further pin-specific limit.
3 I/O 3 bidirectional Data/power line I/O 3 is protected by the device, with a 5.0 V reverse stand-off (VRWM) and 100 W peak pulse power (8/20 µs).
4 I/O bidirectional Data/power line I/O (index not printed in the datasheet text) is protected by the device, with a 5.0 V reverse stand-off (VRWM) and 100 W peak pulse power (8/20 µs).
5 Vcc power_in Vcc supply pin of the device; the datasheet gives no voltage or current limit specific to this pin.
6 I/O bidirectional Data/power line I/O (index not printed in the datasheet text) is protected by the device, with a 5.0 V reverse stand-off (VRWM) and 100 W peak pulse power (8/20 µs).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-363
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 100 Watts tp =8/20μs 3
Peak Pulse Current Ipp 5 A tp =8/20μs (note1) 3
ESD per IEC 61000-4-2 (Air) VESD 15 kV ESD per IEC 61000-4-2 (Air) 3
ESD per IEC 61000-4-2 (Contact) VESD 12 kV ESD per IEC 61000-4-2 (Contact) 3
Lead Soldering Temperature TL 260 ℃ 10 seconds 3
Junction Temperature TJ -55 125 ℃ 3
Storage Temperature Tstg -55 125 ℃ 3
Reverse Stand-Off Voltage VRWM 5 V 3
Reverse Breakdown Voltage VBR 6 V IT=1mA 3
Reverse Leakage Current IR 1 uA VRWM=5V,T=25℃ 3
Peak Pulse Current IPP 5 A tp =8/20μs 3
Clamping Voltage VC 12 18 V IPP=5.0A,tp=8/20μs 3
Junction Capacitance IO to IO Cj 0.3 0.45 pF VR = 0V, f = 1MHz, IO to IO 3
Junction Capacitance IO to GND Cj 0.9 pF VR = 0V, f = 1MHz, IO to GND 3

CAD (KiCad official)

  • Symbol: NUP4202W1T2G-MS
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: nup4202w1t2g-ms-etched.step / nup4202w1t2g-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nup4202w1t2g-ms.step / nup4202w1t2g-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 25099fa0b4dfc12c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF