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Contents

README

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NUP4114HMR6T1G-N

BORN · ESD And Surge Protection (TVS/ESD) · SOT-23-6

NUP4114HMR6T1G-N from BORN, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O passive ESD-protected data I/O line, steered by the diode array to Vcc/GND (Cj 0.2-0.25pF IO to IO, 0.36-0.5pF IO to GND typ. range).
2 GND power_in Ground reference of the diode array, connected to the anode side of the internal avalanche (zener) diode.
3 I/O passive ESD-protected data I/O line, steered by the diode array to Vcc/GND (IEC 61000-4-2 ±12kV contact, ±15kV air).
4 I/O passive ESD-protected data I/O line, steered by the diode array to Vcc/GND (IEC 61000-4-2 ±12kV contact, ±15kV air).
5 Vcc power_in Positive rail of the diode array connected to the cathode of the internal avalanche diode (reverse stand-off VRWM 5.0V, breakdown 6-8.5V at 1mA).
6 I/O passive ESD-protected data I/O line, steered by the diode array to Vcc/GND (clamping 13V max at Ipp 3.5A, 8/20µs).

Key specifications

Parameter Value
Manufacturer BORN
Package SOT-23-6
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 60 Watts tp =8/20μs 2
Peak Pulse Current Ipp 3.5 A tp =8/20μs (note 1) 2
ESD per IEC 61000-4-2 (Air) VESD 15 kV IEC 61000-4-2 (Air) 2
ESD per IEC 61000-4-2 (Contact) VESD 12 kV IEC 61000-4-2 (Contact) 2
Junction Temperature TJ -55 125 ℃ 2
Storage Temperature Tstg -55 125 ℃ 2
Lead Soldering Temperature TL 260 ℃ 10 seconds 2
Reverse Stand-Off Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 6 7.8 8.5 V IT=1mA 2
Reverse Leakage Current IR 50 500 nA VRWM=5V, T=25℃ 2
Peak Pulse Current IPP 3.5 A tp =8/20μs 2
Clamping Voltage VC 10 13 V IPP=3.5A, tp=8/20μs 2
Junction Capacitance IO to IO Cj 0.2 0.25 pF VR = 0V, f = 1MHz, IO to IO 2
Junction Capacitance IO to GND Cj 0.36 0.5 pF VR = 0V, f =1MHz, IO to GND 2

CAD (KiCad official)

  • Symbol: NUP4114HMR6T1G-N
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: nup4114hmr6t1g-n-etched.step / nup4114hmr6t1g-n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nup4114hmr6t1g-n.step / nup4114hmr6t1g-n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (4 pp, sha256 e96ccafb111a8380, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF