component
NUD3124LT1G
Public Made by Adomby adom
onsemi Brushed DC Motor Drivers, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNUD3124LT1G
onsemi · Brushed DC Motor Drivers · SOT-23
NUD3124LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Logic-level gate input that drives the internal MOSFET through an internal 10 kΩ and 100 kΩ network, allowing direct drive from logic gates, inverters, and microcontrollers. |
| 2 | SOURCE | passive | MOSFET source terminal; the device is rated for a continuous drain-to-source voltage of 28 V (TJ = 125°C) and a continuous drain current of 150 mA (TJ = 125°C). |
| 3 | DRAIN | passive | MOSFET drain terminal that connects to the inductive load (relay coil), with an internal Zener eliminating the need for a free-wheeling diode; the internal clamp is rated up to 80 V for load dump. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Motor Driver ICs |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage, Continuous | VDSS | 28 | V | TJ = 125°C | 2 | ||
| Gate-to-Source Voltage, Continuous | VGSS | 12 | V | TJ = 125°C | 2 | ||
| Drain Current, Continuous | ID | 150 | mA | TJ = 125°C | 2 | ||
| Single Pulse Drain-to-Source Avalanche Energy | EZ | 250 | mJ | For relay coils/inductive loads of 80 or higher; TJ Initial = 85°C | 2 | ||
| Peak Power Dissipation, Drain-to-Source | PPK | 20 | W | TJ Initial = 85°C; Notes 1 and 2 | 2 | ||
| Load Dump Suppressed Pulse, Drain-to-Source | ELD1 | 80 | V | Suppressed waveform VS = 45 V, RSOURCE = 0.5, T = 200 ms; relay coils/inductive loads of 80 or higher; TJ Initial = 85°C | 2 | ||
| Inductive Switching Transient 1, Drain-to-Source | ELD2 | 100 | V | Waveform RSOURCE = 10, T = 2.0 ms; relay coils/inductive loads of 80 or higher; TJ Initial = 85°C | 2 | ||
| Inductive Switching Transient 2, Drain-to-Source | ELD3 | 300 | V | Waveform RSOURCE = 4.0, T = 50 s; relay coils/inductive loads of 80 or higher; TJ Initial = 85°C | 2 | ||
| Reverse Battery, 10 Minutes (Drain-to-Source) | Rev−Bat | -14 | V | For relay coils/inductive loads of 80 or more | 2 | ||
| Dual Voltage Jump Start, 10 Minutes (Drain-to-Source) | Dual−Volt | 28 | V | 2 | |||
| ESD Human Body Model (HBM) | ESD | 2000 | V | According to EIA/JESD22/A114 specification | 2 | ||
| Operating Ambient Temperature | TA | -40 | 125 | °C | 3 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature Range | TSTG | -65 | 150 | °C | 3 | ||
| Total Power Dissipation, SOT-23 | PD | 225 | mW | Note 5, minimum pad board; derate 1.8 mW/°C above 25°C | 3 | ||
| Thermal Resistance Junction-to-Ambient, SOT-23 | RJA | 556 | °C/W | Note 5, minimum pad board | 3 | ||
| Drain to Source Sustaining Voltage | VBRDSS | 28 | 34 | 38 | V | ID = 10 mA | 4 |
| Drain to Source Leakage Current | IDSS | 0.5 | A | VDS = 12 V, VGS = 0 V | 4 | ||
| Drain to Source Leakage Current | IDSS | 1 | A | VDS = 12 V, VGS = 0 V, TJ = 125°C | 4 | ||
| Drain to Source Leakage Current | IDSS | 50 | A | VDS = 28 V, VGS = 0 V | 4 | ||
| Drain to Source Leakage Current | IDSS | 80 | A | VDS = 28 V, VGS = 0 V, TJ = 125°C | 4 | ||
| Gate Body Leakage Current | IGSS | 60 | A | VGS = 3.0 V, VDS = 0 V | 4 | ||
| Gate Body Leakage Current | IGSS | 80 | A | VGS = 3.0 V, VDS = 0 V, TJ = 125°C | 4 | ||
| Gate Body Leakage Current | IGSS | 90 | A | VGS = 5.0 V, VDS = 0 V | 4 | ||
| Gate Body Leakage Current | IGSS | 110 | A | VGS = 5.0 V, VDS = 0 V, TJ = 125°C | 4 | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2 | V | VGS = VDS, ID = 1.0 mA | 4 |
| Gate Threshold Voltage | VGS(th) | 1.3 | 2 | V | VGS = VDS, ID = 1.0 mA, TJ = 125°C | 4 | |
| Drain to Source On-Resistance | RDS(on) | 1.4 | Ω | ID = 150 mA, VGS = 3.0 V | 4 | ||
| Drain to Source On-Resistance | RDS(on) | 1.7 | Ω | ID = 150 mA, VGS = 3.0 V, TJ = 125°C | 4 | ||
| Drain to Source On-Resistance | RDS(on) | 0.8 | Ω | ID = 150 mA, VGS = 5.0 V | 4 | ||
| Drain to Source On-Resistance | RDS(on) | 1.1 | Ω | ID = 150 mA, VGS = 5.0 V, TJ = 125°C | 4 | ||
| Output Continuous Current | IDS(on) | 150 | 200 | mA | VDS = 0.25 V, VGS = 3.0 V | 4 | |
| Output Continuous Current | IDS(on) | 140 | mA | VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C | 4 |
CAD (KiCad official)
- Symbol:
NUD3124LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nud3124lt1g-etched.step/nud3124lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nud3124lt1g.step/nud3124lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
788b79ff317e8fc5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).