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NTZD3155CT2G

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onsemi MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTZD3155CT2G

onsemi · MOSFETs · SOT-563

NTZD3155CT2G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET; the N-channel device is rated 20 V VDSS and 540 mA continuous drain current at TA = 25°C (steady state).
2 G1 input Gate of the N-channel MOSFET, with ESD protection; gate-to-source voltage is rated ±6 V maximum.
3 D2 passive Drain of the P-channel MOSFET; the P-channel device is rated −20 V VDSS and −430 mA continuous drain current at TA = 25°C (steady state).
4 S2 passive Source of the P-channel MOSFET, referenced to the P-channel device rating of −20 V VDSS.
5 G2 input Gate of the P-channel MOSFET, with ESD protection; gate-to-source voltage is rated ±6 V maximum.
6 D1 passive Drain of the N-channel MOSFET; the N-channel device is rated 20 V VDSS.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-to-Source Voltage VGS -6 6 V 1
Drain-to-Source Breakdown Voltage (N-channel) V(BR)DSS 20 V VGS = 0 V, ID = 250 µA 2
Drain-to-Source Breakdown Voltage (P-channel) V(BR)DSS -20 V ID = −250 µA 2
Zero Gate Voltage Drain Current (N-channel, TJ = 25°C) IDSS 1 µA VGS = 0 V, VDS = 16 V, TJ = 25°C 2
Zero Gate Voltage Drain Current (P-channel) IDSS -1 µA VGS = 0 V, VDS = −16 V 2
Zero Gate Voltage Drain Current (N-channel, TJ = 125°C) IDSS 2 µA VGS = 0 V, VDS = 16 V, TJ = 125°C 2
Zero Gate Voltage Drain Current (P-channel, TJ = 125°C) IDSS -5 µA VGS = 0 V, VDS = −16 V 2
Gate-to-Source Leakage Current (P-channel) IGSS 2 µA VDS = 0 V, VGS = ±4.5 V 2
Gate-to-Source Leakage Current (N-channel) IGSS 5 µA 2
Gate Threshold Voltage (N-channel) VGS(TH) 0.45 1 V VGS = VDS, ID = 250 µA 2
Gate Threshold Voltage (P-channel) VGS(TH) -0.45 -1 V ID = −250 µA 2
Drain-to-Source On Resistance (N-channel) RDS(on) 0.4 0.55 Ω VGS = 4.5 V, ID = 540 mA 2
Drain-to-Source On Resistance (P-channel) RDS(on) 0.5 0.9 Ω VGS = −4.5 V, ID = −430 mA 2
Drain-to-Source On Resistance (N-channel) RDS(on) 0.5 0.7 Ω VGS = 2.5 V, ID = 500 mA 2
Drain-to-Source On Resistance (P-channel) RDS(on) 0.6 1.2 Ω VGS = −2.5 V, ID = −300 mA 2
Drain-to-Source On Resistance (N-channel) RDS(on) 0.7 0.9 Ω VGS = 1.8 V, ID = 350 mA 2
Drain-to-Source On Resistance (P-channel) RDS(on) 1 2 Ω VGS = −1.8 V, ID = −150 mA 2
Input Capacitance (N-channel) CISS 80 150 pF f = 1 MHz, VGS = 0 V, VDS = 16 V 2
Output Capacitance (N-channel) COSS 13 25 pF f = 1 MHz, VGS = 0 V, VDS = 16 V 2
Reverse Transfer Capacitance (N-channel) CRSS 10 20 pF f = 1 MHz, VGS = 0 V, VDS = 16 V 2
Input Capacitance (P-channel) CISS 105 175 pF f = 1 MHz, VGS = 0 V, VDS = −16 V 2
Output Capacitance (P-channel) COSS 15 30 pF f = 1 MHz, VGS = 0 V, VDS = −16 V 2
Reverse Transfer Capacitance (P-channel) CRSS 10 20 pF f = 1 MHz, VGS = 0 V, VDS = −16 V 2
Total Gate Charge (N-channel) QG(TOT) 1.5 2.5 nC VGS = 4.5 V, VDS = −10 V; ID = 540 mA 3
Total Gate Charge (P-channel) QG(TOT) 1.7 2.5 nC VGS = −4.5 V, VDS = 10 V; ID = −380 mA 3
Forward Diode Voltage (N-channel) VSD 0.7 1.2 V VGS = 0 V, TJ = 25°C, IS = 350 mA 3
Forward Diode Voltage (P-channel) VSD -0.8 -1.2 V VGS = 0 V, TJ = 25°C, IS = −350 mA 3
Continuous Drain Current N-channel, steady state ID 540 mA Steady state, TA = 25°C 1
Continuous Drain Current N-channel, steady state ID 390 mA Steady state, TA = 85°C 1
Continuous Drain Current N-channel, t ≤ 5 s ID 570 mA t 5 s, TA = 25°C 1
Continuous Drain Current P-channel, steady state ID -430 mA Steady state, TA = 25°C 1
Continuous Drain Current P-channel, steady state ID -310 mA Steady state, TA = 85°C 1
Continuous Drain Current P-channel, t ≤ 5 s ID -455 mA t 5 s, TA = 25°C 1
Power Dissipation, steady state PD 250 mW Steady state, TA = 25°C 1
Power Dissipation, t ≤ 5 s PD 280 mW t 5 s, TA = 25°C 1
Pulsed Drain Current N-channel IDM 1500 mA tp = 10 s 1
Pulsed Drain Current P-channel IDM -750 mA 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS 350 mA 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Thermal Resistance, steady state RθJA 500 °C/W Steady state, surface mounted on FR4, 1 in² pad 2
Junction-to-Ambient Thermal Resistance, t = 5 s RθJA 447 °C/W t = 5 s, surface mounted on FR4, 1 in² pad 2

CAD (KiCad official)

  • Symbol: NTZD3155CT2G
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: ntzd3155ct2g-etched.step / ntzd3155ct2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntzd3155ct2g.step / ntzd3155ct2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 969cadd0e9f67fb3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF