component
NTZD3155CT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTZD3155CT1G
onsemi · MOSFETs · SOT-563
NTZD3155CT1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of channel 1 of the complementary MOSFET pair; maximum ratings are VDSS 20 V (N) and -20 V (P) with VGS ±6 V. |
| 2 | G1 | input | Gate terminal of channel 1, ESD protected; gate-to-source voltage is rated ±6 V maximum. |
| 3 | D2 | passive | Drain terminal of channel 2 of the complementary MOSFET pair; drain-to-source voltage is rated 20 V (N) and -20 V (P). |
| 4 | S2 | passive | Source terminal of channel 2 of the complementary MOSFET pair; maximum ratings are VDSS 20 V (N) and -20 V (P) with VGS ±6 V. |
| 5 | G2 | input | Gate terminal of channel 2, ESD protected; gate-to-source voltage is rated ±6 V maximum. |
| 6 | D1 | passive | Drain terminal of channel 1 of the complementary MOSFET pair; drain-to-source voltage is rated 20 V (N) and -20 V (P). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-563 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V ID = 250 A | 2 | ||
| Drain-to-Source Breakdown Voltage (P-channel) | V(BR)DSS | -20 | V | ID = -250 A | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 0.45 | 1 | V | VGS = VDS ID = 250 A | 2 | |
| Gate Threshold Voltage (P-channel) | VGS(TH) | -0.45 | -1 | V | ID = -250 A | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.4 | 0.55 | Ω | VGS = 4.5 V, ID = 540 mA | 2 | |
| Drain-to-Source On Resistance (P-channel) | RDS(on) | 0.5 | 0.9 | Ω | VGS = -4.5 V, ID = -430 mA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.5 | 0.7 | Ω | VGS = 2.5 V, ID = 500 mA | 2 | |
| Drain-to-Source On Resistance (P-channel) | RDS(on) | 0.6 | 1.2 | Ω | VGS = -2.5 V, ID = -300 mA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.7 | 0.9 | Ω | VGS = 1.8 V, ID = 350 mA | 2 | |
| Drain-to-Source On Resistance (P-channel) | RDS(on) | 1 | 2 | Ω | VGS = -1.8 V, ID = -150 mA | 2 | |
| Input Capacitance | CISS | 80 | 150 | pF | f = 1 MHz, VGS = 0 V, VDS = 16 V | 2 | |
| Output Capacitance | COSS | 13 | 25 | pF | f = 1 MHz, VGS = 0 V, VDS = 16 V | 2 | |
| Reverse Transfer Capacitance | CRSS | 10 | 20 | pF | f = 1 MHz, VGS = 0 V, VDS = 16 V | 2 | |
| Input Capacitance (P-channel) | CISS | 105 | 175 | pF | f = 1 MHz, VGS = 0 V, VDS = -16 V | 2 | |
| Output Capacitance (P-channel) | COSS | 15 | 30 | pF | f = 1 MHz, VGS = 0 V, VDS = -16 V | 2 | |
| Reverse Transfer Capacitance (P-channel) | CRSS | 10 | 20 | pF | f = 1 MHz, VGS = 0 V, VDS = -16 V | 2 | |
| Total Gate Charge | QG(TOT) | 1.5 | 2.5 | nC | VGS = 4.5 V, VDS = -10 V, ID = 540 mA | 3 | |
| Total Gate Charge (P-channel) | QG(TOT) | 1.7 | 2.5 | nC | VGS = -4.5 V, VDS = 10 V, ID = -380 mA | 3 | |
| Forward Diode Voltage | VSD | 0.7 | 1.2 | V | VGS = 0 V, TJ = 25°C, IS = 350 mA | 3 | |
| Forward Diode Voltage (P-channel) | VSD | -0.8 | -1.2 | V | VGS = 0 V, TJ = 25°C, IS = -350 mA | 3 | |
| Drain Current Continuous (N-channel, steady state) | ID | 540 | mA | Steady State, TA = 25°C | 1 | ||
| Drain Current Continuous (N-channel, steady state) | ID | 390 | mA | Steady State, TA = 85°C | 1 | ||
| Drain Current Continuous (N-channel, t 5 s) | ID | 570 | mA | t 5 s, TA = 25°C | 1 | ||
| Drain Current Continuous (P-channel, steady state) | ID | -430 | mA | Steady State, TA = 25°C | 1 | ||
| Drain Current Continuous (P-channel, steady state) | ID | -310 | mA | Steady State, TA = 85°C | 1 | ||
| Drain Current Continuous (P-channel, t 5 s) | ID | -455 | mA | t 5 s, TA = 25°C | 1 | ||
| Power Dissipation | PD | 250 | mW | Steady State, TA = 25°C | 1 | ||
| Power Dissipation | PD | 280 | mW | t 5 s, TA = 25°C | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 1500 | mA | tp = 10 s | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -750 | mA | tp = 10 s | 1 | ||
| Source Current (Body Diode) | IS | 350 | mA | 1 | |||
| Drain-to-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient Thermal Resistance, Steady State | RθJA | 500 | °C/W | Steady State, surface mounted on FR4, 1 in sq pad | 2 | ||
| Junction-to-Ambient Thermal Resistance, t = 5 s | RθJA | 447 | °C/W | t = 5 s, surface mounted on FR4, 1 in sq pad | 2 |
CAD (KiCad official)
- Symbol:
NTZD3155CT1G - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
ntzd3155ct1g-etched.step/ntzd3155ct1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntzd3155ct1g.step/ntzd3155ct1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
8faed5c8b7d1d400, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).