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NTZD3154NT5G

onsemi · MOSFETs · SOT-563

NTZD3154NT5G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; body diode source current IS max 350 mA.
2 G1 input ESD-protected gate of MOSFET 1; VGS rated ±7.0 V with threshold 0.45 to 1.0 V.
3 D2 passive Drain of N-channel MOSFET 2; VDSS 20 V and continuous ID 540 mA at TA = 25°C steady state.
4 S2 passive Source of N-channel MOSFET 2; body diode source current IS max 350 mA.
5 G2 input ESD-protected gate of MOSFET 2; VGS rated ±7.0 V with threshold 0.45 to 1.0 V.
6 D1 passive Drain of N-channel MOSFET 1; VDSS 20 V and continuous ID 540 mA at TA = 25°C steady state.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 20 V 1
Gate-to-Source Voltage VGS -7 7 V 1
Continuous Drain Current (Note 1), steady state ID 540 mA TA = 25°C, steady state 1
Continuous Drain Current (Note 1), steady state ID 390 mA TA = 85°C, steady state 1
Power Dissipation (Note 1), steady state PD 250 mW steady state 1
Continuous Drain Current (Note 1), t ≤ 5 s ID 570 mA TA = 25°C, t ≤ 5 s 1
Continuous Drain Current (Note 1), t ≤ 5 s ID 410 mA TA = 85°C, t ≤ 5 s 1
Power Dissipation (Note 1), t ≤ 5 s PD 280 mW t ≤ 5 s 1
Pulsed Drain Current IDM 1.5 A tp = 10 µs 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS 350 mA 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8″ from case for 10 s 1
Junction-to-Ambient – Steady State (Note 1) RθJA 500 °C/W steady state 1
Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 447 °C/W t ≤ 5 s 1
Drain-to-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current, TJ = 25°C IDSS 1 µA VGS = 0 V, VDS = 16 V, TJ = 25°C 2
Zero Gate Voltage Drain Current, TJ = 125°C IDSS 5 µA VGS = 0 V, VDS = 16 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS 5 µA VDS = 0 V, VGS = 4.5 V 2
Gate Threshold Voltage VGS(TH) 0.45 1 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On Resistance RDS(on) 0.55 Ω VGS = 4.5 V, ID = 540 mA 2
Drain-to-Source On Resistance RDS(on) 0.7 Ω VGS = 2.5 V, ID = 500 mA 2
Drain-to-Source On Resistance RDS(on) 0.9 Ω VGS = 1.8 V, ID = 350 mA 2
Input Capacitance CISS 150 pF VGS = 0 V, f = 1.0 MHz, VDS = 16 V 2
Output Capacitance COSS 25 pF VGS = 0 V, f = 1.0 MHz, VDS = 16 V 2
Reverse Transfer Capacitance CRSS 20 pF VGS = 0 V, f = 1.0 MHz, VDS = 16 V 2
Total Gate Charge QG(TOT) 2.5 nC VGS = 4.5 V, VDS = 10 V; ID = 540 mA 2
Forward Diode Voltage, TJ = 25°C VSD 1.2 V VGS = 0 V, IS = 350 mA, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NTZD3154NT5G
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: ntzd3154nt5g-etched.step / ntzd3154nt5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntzd3154nt5g.step / ntzd3154nt5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 78122b3b50e929f9, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF