component
NTZD3154NT5G
Public Made by Adomby adom
onsemi MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ntzd3154nt5g: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+366−1
README.md+34@@ -24,6 +24,40 @@ NTZD3154NT5G from onsemi, in a SOT-563. Pinout and pin descriptions extracted fr | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 20 | V | | 1 |+| Gate-to-Source Voltage | VGS | -7 | | 7 | V | | 1 |+| Continuous Drain Current (Note 1), steady state | ID | | | 540 | mA | TA = 25°C, steady state | 1 |+| Continuous Drain Current (Note 1), steady state | ID | | | 390 | mA | TA = 85°C, steady state | 1 |+| Power Dissipation (Note 1), steady state | PD | | | 250 | mW | steady state | 1 |+| Continuous Drain Current (Note 1), t ≤ 5 s | ID | | | 570 | mA | TA = 25°C, t ≤ 5 s | 1 |+| Continuous Drain Current (Note 1), t ≤ 5 s | ID | | | 410 | mA | TA = 85°C, t ≤ 5 s | 1 |+| Power Dissipation (Note 1), t ≤ 5 s | PD | | | 280 | mW | t ≤ 5 s | 1 |+| Pulsed Drain Current | IDM | | | 1.5 | A | tp = 10 µs | 1 |+| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode) | IS | | | 350 | mA | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8″ from case for 10 s | 1 |+| Junction-to-Ambient – Steady State (Note 1) | RθJA | | | 500 | °C/W | steady state | 1 |+| Junction-to-Ambient – t ≤ 5 s (Note 1) | RθJA | | | 447 | °C/W | t ≤ 5 s | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | | | 1 | µA | VGS = 0 V, VDS = 16 V, TJ = 25°C | 2 |+| Zero Gate Voltage Drain Current, TJ = 125°C | IDSS | | | 5 | µA | VGS = 0 V, VDS = 16 V, TJ = 125°C | 2 |+| Gate-to-Source Leakage Current | IGSS | | | 5 | µA | VDS = 0 V, VGS = 4.5 V | 2 |+| Gate Threshold Voltage | VGS(TH) | 0.45 | | 1 | V | VGS = VDS, ID = 250 µA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | | 0.55 | Ω | VGS = 4.5 V, ID = 540 mA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | | 0.7 | Ω | VGS = 2.5 V, ID = 500 mA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | | 0.9 | Ω | VGS = 1.8 V, ID = 350 mA | 2 |+| Input Capacitance | CISS | | | 150 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 16 V | 2 |+| Output Capacitance | COSS | | | 25 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 16 V | 2 |+| Reverse Transfer Capacitance | CRSS | | | 20 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 16 V | 2 |+| Total Gate Charge | QG(TOT) | | | 2.5 | nC | VGS = 4.5 V, VDS = 10 V; ID = 540 mA | 2 |+| Forward Diode Voltage, TJ = 25°C | VSD | | | 1.2 | V | VGS = 0 V, IS = 350 mA, TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `NTZD3154NT5G`
page.json+332−1@@ -169,6 +169,337 @@ "Package": "SOT-563", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "78122b3b50e929f9",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -7,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1), steady state",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 540,+ "conditions": "TA = 25°C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1), steady state",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 390,+ "conditions": "TA = 85°C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1), steady state",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1), t ≤ 5 s",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 570,+ "conditions": "TA = 25°C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1), t ≤ 5 s",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 410,+ "conditions": "TA = 85°C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1), t ≤ 5 s",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 280,+ "conditions": "t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "tp = 10 µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8″ from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient – Steady State (Note 1)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient – t ≤ 5 s (Note 1)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 447,+ "conditions": "t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 25°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 16 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 125°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VGS = 0 V, VDS = 16 V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 0 V, VGS = 4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.45,+ "typ": null,+ "max": 1,+ "conditions": "VGS = VDS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.55,+ "conditions": "VGS = 4.5 V, ID = 540 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "VGS = 2.5 V, ID = 500 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "VGS = 1.8 V, ID = 350 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = 16 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = 16 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = 16 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "QG(TOT)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "VGS = 4.5 V, VDS = 10 V; ID = 540 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage, TJ = 25°C",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS = 0 V, IS = 350 mA, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -210,4 +541,4 @@ "visibility": { "public": true }-}+}