component
NTZD3152PT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTZD3152PT1G
onsemi · MOSFETs · SOT-563
NTZD3152PT1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of P-channel MOSFET 1, with drain-to-source voltage rated at −20 V. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with gate-to-source voltage limited to ±6.0 V and ESD protected gate. |
| 3 | D2 | passive | Drain of P-channel MOSFET 2, rated at −20 V drain-to-source with continuous drain current of −430 mA at TA = 25°C steady state. |
| 4 | S2 | passive | Source terminal of P-channel MOSFET 2, with drain-to-source voltage rated at −20 V. |
| 5 | G2 | input | Gate of P-channel MOSFET 2, with gate-to-source voltage limited to ±6.0 V and ESD protected gate. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1, rated at −20 V drain-to-source with continuous drain current of −430 mA at TA = 25°C steady state. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Continuous Drain Current, steady state | ID | -430 | mA | TA = 25°C, steady state | 1 | ||
| Continuous Drain Current, steady state | ID | -310 | mA | TA = 85°C, steady state | 1 | ||
| Power Dissipation, steady state | PD | 250 | mW | Steady state | 1 | ||
| Continuous Drain Current, t<=5 s | ID | -455 | mA | TA = 25°C, t<=5 s | 1 | ||
| Continuous Drain Current, t<=5 s | ID | -328 | mA | TA = 85°C, t<=5 s | 1 | ||
| Power Dissipation, t<=5 s | PD | 280 | mW | t<=5 s | 1 | ||
| Pulsed Drain Current | IDM | -750 | mA | tp = 10 µs | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | -350 | mA | 1 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in. from case for 10 s | 1 | ||
| Junction-to-Ambient, Steady State | RθJA | 500 | °C/W | Steady state, surface mounted on FR4, 1 in. sq. pad | 1 | ||
| Junction-to-Ambient, t<=5 s | RθJA | 447 | °C/W | t<=5 s, surface mounted on FR4, 1 in. sq. pad | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | -1 | A | VGS = 0 V, VDS = -16 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 125°C | IDSS | -2 | A | VGS = 0 V, VDS = -16 V, TJ = 125°C | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 2 | A | VDS = 0 V, VGS = 4.5 V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -0.45 | -1 | V | VGS = VDS, ID = -250 µA | 2 | |
| Drain-to-Source On Resistance, VGS = -4.5 V | RDS(on) | 0.5 | 0.9 | VGS = -4.5 V, ID = -430 mA | 2 | ||
| Drain-to-Source On Resistance, VGS = -2.5 V | RDS(on) | 0.6 | 1.2 | VGS = -2.5 V, ID = -300 mA | 2 | ||
| Drain-to-Source On Resistance, VGS = -1.8 V | RDS(on) | 1 | 2 | VGS = -1.8 V, ID = -150 mA | 2 | ||
| Input Capacitance | CISS | 105 | 175 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -16 V | 2 | |
| Output Capacitance | COSS | 15 | 30 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -16 V | 2 | |
| Reverse Transfer Capacitance | CRSS | 10 | 20 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -16 V | 2 | |
| Total Gate Charge | QG(TOT) | 1.7 | 2.5 | nC | VGS = -4.5 V, VDS = -10 V, ID = -215 mA | 2 | |
| Forward Transconductance | gFS | 1 | S | VDS = -10 V, ID = -430 mA | 2 | ||
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | -1.9 | mV/°C | 2 | |||
| Drain-to-Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ | 18 | mV/°C | 2 | |||
| Forward Diode Voltage, TJ = 25°C | VSD | -0.8 | -1.2 | V | VGS = 0 V, IS = -350 mA, TJ = 25°C | 2 |
CAD (KiCad official)
- Symbol:
NTZD3152PT1G - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
ntzd3152pt1g-etched.step/ntzd3152pt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntzd3152pt1g.step/ntzd3152pt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
a1e69a05fa4cd617, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTZD3152PT1G
**onsemi** · MOSFETs · SOT-563
NTZD3152PT1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of P-channel MOSFET 1, with drain-to-source voltage rated at −20 V. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with gate-to-source voltage limited to ±6.0 V and ESD protected gate. |
| 3 | D2 | passive | Drain of P-channel MOSFET 2, rated at −20 V drain-to-source with continuous drain current of −430 mA at TA = 25°C steady state. |
| 4 | S2 | passive | Source terminal of P-channel MOSFET 2, with drain-to-source voltage rated at −20 V. |
| 5 | G2 | input | Gate of P-channel MOSFET 2, with gate-to-source voltage limited to ±6.0 V and ESD protected gate. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1, rated at −20 V drain-to-source with continuous drain current of −430 mA at TA = 25°C steady state. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | -20 | V | | 1 |
| Gate-to-Source Voltage | VGS | -6 | | 6 | V | | 1 |
| Continuous Drain Current, steady state | ID | | | -430 | mA | TA = 25°C, steady state | 1 |
| Continuous Drain Current, steady state | ID | | | -310 | mA | TA = 85°C, steady state | 1 |
| Power Dissipation, steady state | PD | | | 250 | mW | Steady state | 1 |
| Continuous Drain Current, t<=5 s | ID | | | -455 | mA | TA = 25°C, t<=5 s | 1 |
| Continuous Drain Current, t<=5 s | ID | | | -328 | mA | TA = 85°C, t<=5 s | 1 |
| Power Dissipation, t<=5 s | PD | | | 280 | mW | t<=5 s | 1 |
| Pulsed Drain Current | IDM | | | -750 | mA | tp = 10 µs | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Source Current (Body Diode) | IS | | | -350 | mA | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in. from case for 10 s | 1 |
| Junction-to-Ambient, Steady State | RθJA | | | 500 | °C/W | Steady state, surface mounted on FR4, 1 in. sq. pad | 1 |
| Junction-to-Ambient, t<=5 s | RθJA | | | 447 | °C/W | t<=5 s, surface mounted on FR4, 1 in. sq. pad | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | | | -1 | A | VGS = 0 V, VDS = -16 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current, TJ = 125°C | IDSS | | | -2 | A | VGS = 0 V, VDS = -16 V, TJ = 125°C | 2 |
| Gate-to-Source Leakage Current | IGSS | | | 2 | A | VDS = 0 V, VGS = 4.5 V | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.45 | | -1 | V | VGS = VDS, ID = -250 µA | 2 |
| Drain-to-Source On Resistance, VGS = -4.5 V | RDS(on) | | 0.5 | 0.9 | | VGS = -4.5 V, ID = -430 mA | 2 |
| Drain-to-Source On Resistance, VGS = -2.5 V | RDS(on) | | 0.6 | 1.2 | | VGS = -2.5 V, ID = -300 mA | 2 |
| Drain-to-Source On Resistance, VGS = -1.8 V | RDS(on) | | 1 | 2 | | VGS = -1.8 V, ID = -150 mA | 2 |
| Input Capacitance | CISS | | 105 | 175 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -16 V | 2 |
| Output Capacitance | COSS | | 15 | 30 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -16 V | 2 |
| Reverse Transfer Capacitance | CRSS | | 10 | 20 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -16 V | 2 |
| Total Gate Charge | QG(TOT) | | 1.7 | 2.5 | nC | VGS = -4.5 V, VDS = -10 V, ID = -215 mA | 2 |
| Forward Transconductance | gFS | | 1 | | S | VDS = -10 V, ID = -430 mA | 2 |
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | | -1.9 | | mV/°C | | 2 |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ | | 18 | | mV/°C | | 2 |
| Forward Diode Voltage, TJ = 25°C | VSD | | -0.8 | -1.2 | V | VGS = 0 V, IS = -350 mA, TJ = 25°C | 2 |
## CAD (KiCad official)
- Symbol: `NTZD3152PT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `ntzd3152pt1g-etched.step` / `ntzd3152pt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntzd3152pt1g.step` / `ntzd3152pt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/ntzd3152pt1-d.pdf) (5 pp, sha256 `a1e69a05fa4cd617`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntzd3152pt1g-datasheet.pdf)