component
NTTFS015N04C-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTTFS015N04C-MS
MSKSEMI · MOSFETs · DFN5x6-8L
NTTFS015N04C-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 at the marked corner. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal; VGS rated ±20V, with operation at gate voltages as low as 4.5V. |
| 5 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 6 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 7 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 8 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 50 | A | VGS @ 10V, TC=25℃ | 2 | ||
| Continuous Drain Current | ID | 38 | A | VGS @ 10V, TC=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 160 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 2 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.76 | ℃/W | Note 2 | 3 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V, ID=250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V, VGS=0V | 3 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | μA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source on-Resistance | RDS(on) | 11 | 14 | mΩ | VGS=10V, ID=30A | 3 | |
| Forward Transconductance | gFS | 30 | S | VDS=5V, ID=20A | 3 | ||
| Output Capacitance | Coss | 171 | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 115 | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 | ||
| Turn-on Delay Time | td(on) | 5 | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 | ||
| Turn-on Rise Time | tr | 24 | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 | ||
| Turn-off Delay Time | td(off) | 38 | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 | ||
| Turn-off Fall Time | tf | 12 | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 | ||
| Total Gate Charge | Qg | 24 | nC | VDS=30V, ID=30A, VGS=10V | 3 | ||
| Gate-Source Charge | Qgs | 5.9 | nC | VDS=30V, ID=30A, VGS=10V | 3 | ||
| Gate-Drain Charge | Qgd | 3.6 | nC | VDS=30V, ID=30A, VGS=10V | 3 | ||
| Drain Forward Current | IS | 48 | A | Note 2 | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 3 | ||
| Reverse Recovery Time | trr | 9 | ns | TJ=25℃, IF=30A, di/dt=100A/μs | 3 | ||
| Reverse Recovery Charge | Qrr | 15 | nC | 3 |
CAD (KiCad official)
- Symbol:
NTTFS015N04C-MS - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
nttfs015n04c-ms-etched.step/nttfs015n04c-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nttfs015n04c-ms.step/nttfs015n04c-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
abc2ae806b276a78, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTTFS015N04C-MS
**MSKSEMI** · MOSFETs · DFN5x6-8L
NTTFS015N04C-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 at the marked corner. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal; VGS rated ±20V, with operation at gate voltages as low as 4.5V. |
| 5 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 6 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 7 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 8 | D | passive | Drain terminal; VDS rated 40V, ID 50A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 50 | A | VGS @ 10V, TC=25℃ | 2 |
| Continuous Drain Current | ID | | | 38 | A | VGS @ 10V, TC=100℃ | 2 |
| Pulsed Drain Current | IDM | | | 160 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 30 | mJ | Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 2 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 2 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.76 | | ℃/W | Note 2 | 3 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS=0V, ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=40V, VGS=0V | 3 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | μA | VDS=0V, VGS=±20V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source on-Resistance | RDS(on) | | 11 | 14 | mΩ | VGS=10V, ID=30A | 3 |
| Forward Transconductance | gFS | 30 | | | S | VDS=5V, ID=20A | 3 |
| Output Capacitance | Coss | | 171 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 115 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 |
| Turn-on Delay Time | td(on) | | 5 | | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 |
| Turn-on Rise Time | tr | | 24 | | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 |
| Turn-off Delay Time | td(off) | | 38 | | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 |
| Turn-off Fall Time | tf | | 12 | | ns | VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω | 3 |
| Total Gate Charge | Qg | | 24 | | nC | VDS=30V, ID=30A, VGS=10V | 3 |
| Gate-Source Charge | Qgs | | 5.9 | | nC | VDS=30V, ID=30A, VGS=10V | 3 |
| Gate-Drain Charge | Qgd | | 3.6 | | nC | VDS=30V, ID=30A, VGS=10V | 3 |
| Drain Forward Current | IS | | | 48 | A | Note 2 | 3 |
| Diode Forward Voltage | VSD | | 1.2 | | V | VGS=0V, IS=30A | 3 |
| Reverse Recovery Time | trr | | 9 | | ns | TJ=25℃, IF=30A, di/dt=100A/μs | 3 |
| Reverse Recovery Charge | Qrr | | 15 | | nC | | 3 |
## CAD (KiCad official)
- Symbol: `NTTFS015N04C-MS`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `nttfs015n04c-ms-etched.step` / `nttfs015n04c-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nttfs015n04c-ms.step` / `nttfs015n04c-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602919504343285760) (8 pp, sha256 `abc2ae806b276a78`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nttfs015n04c-ms-datasheet.pdf)