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NTTFS015N04C-HXY

HXY MOSFET · MOSFETs · DFN5X6-8L

NTTFS015N04C-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (VDS = 40V, ID = 40A device).
2 S passive Source terminal of the N-channel MOSFET, tied in parallel with the other source pins.
3 S passive Source terminal of the N-channel MOSFET, tied in parallel with the other source pins.
4 G input Gate terminal; gate-source voltage limit is ±20V, with operation at gate voltages as low as 4.5V.
5 D passive Drain terminal; drain-source voltage rating is 40V.
6 D passive Drain terminal, tied in parallel with the other drain pins; continuous drain current is 40A at TC=25℃.
7 D passive Drain terminal, tied in parallel with the other drain pins; pulsed drain current is 160A.
8 D passive Drain terminal, tied in parallel with the other drain pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5X6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 40 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 28 A VGS @ 10V 1
Pulsed Drain Current IDM 160 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 50 mJ TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Drain-Source On-Resistance RDS(ON) 14 mΩ VGS=10V 1

CAD (KiCad official)

  • Symbol: NTTFS015N04C-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: nttfs015n04c-hxy-etched.step / nttfs015n04c-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nttfs015n04c-hxy.step / nttfs015n04c-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 77b782353f22ebf8, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF