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NTTFD9D0N06HLTWG

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onsemi MOSFETs, WDFN-12. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTTFD9D0N06HLTWG

onsemi · MOSFETs · WDFN-12

NTTFD9D0N06HLTWG from onsemi, in a WDFN-12. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND (LSS) power_in Low side source, tied to ground together with pins 11 and 12.
2 LSG input Low side gate pin for the synchronous N-channel MOSFET (Q1).
3 V+ (HSD) power_in High side drain, internally connected to pins 4, 5 and 6 as the V+ input.
4 V+ (HSD) power_in High side drain, internally connected to pins 3, 5 and 6 as the V+ input.
5 V+ (HSD) power_in High side drain, internally connected to pins 3, 4 and 6 as the V+ input.
6 V+ (HSD) power_in High side drain, internally connected to pins 3, 4 and 5 as the V+ input.
7 HSG input High side gate pin for the control N-channel MOSFET (Q2).
8 SW passive Switching node, the low side drain, internally connected to pins 9 and 10.
9 SW passive Switching node, the low side drain, internally connected to pins 8 and 10.
10 SW passive Switching node, the low side drain, internally connected to pins 8 and 9.
11 GND (LSS) power_in Low side source, tied to ground together with pins 1 and 12.
12 GND (LSS) power_in Low side source, tied to ground together with pins 1 and 11.
13 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer onsemi
Package WDFN-12
Category Triode/MOS Tube/Transistor
Pins 13

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 60 V 2
Gate-to-Source Voltage VGS -20 20 V 2
Drain Current Continuous ID 38 A TC = 25°C (Note 4) 2
Drain Current Continuous ID 23 A TC = 100°C (Note 4) 2
Drain Current Continuous ID 9 A TA = 25°C (Note 1a) 2
Drain Current Pulsed ID 349 A TA = 25°C 2
Single Pulse Avalanche Energy EAS 46 mJ (Note 3) 2
Power Dissipation for Single Operation PD 26 W TC = 25°C 2
Power Dissipation for Single Operation PD 1.7 W TA = 25°C (Note 1a) 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction-to-Case RJC 4.8 °C/W 2
Thermal Resistance, Junction-to-Ambient, max copper RJA 70 °C/W 1 in2 pad of 2 oz copper (Note 1a) 2
Thermal Resistance, Junction-to-Ambient, min copper RJA 135 °C/W minimum pad of 2 oz copper (Note 1c) 2
Drain-to-Source Breakdown Voltage BVDSS 60 V ID = 250 A, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 A VDS = 60 V, VGS = 0 V 2
Gate-to-Source Threshold Voltage VGS(th) 1.2 1.6 2 V VGS = VDS, ID = 50 A 2
Drain-to-Source On Resistance rDS(on) 7.3 9 m VGS = 10 V, ID = 10 A 2
Drain-to-Source On Resistance rDS(on) 9.8 13 m VGS = 4.5 V, ID = 8 A 2
Source to Drain Diode Forward Voltage VSD 0.79 1.2 V VGS = 0 V, IS = 10 A (Note 2) 3

CAD (KiCad official)

  • Symbol: NTTFD9D0N06HLTWG
  • Footprint: Package_DFN_QFN:WDFN-12-1EP_3x3mm_P0.45mm_EP1.7x2.5mm
  • 3D model: WDFN-12 (KiCad packages3D, STEP)
  • 3D model files: nttfd9d0n06hltwg-etched.step / nttfd9d0n06hltwg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nttfd9d0n06hltwg.step / nttfd9d0n06hltwg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 c82bb1ade15b730a, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF