component
NTS4101PT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nts4101pt1g: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
2 files changed
+379−1
README.md+35@@ -21,6 +21,41 @@ NTS4101PT1G from onsemi, in a SOT-323. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | -20 | | | V | | 1 |+| Gate-to-Source Voltage | VGS | -8 | | 8 | V | | 1 |+| Continuous Drain Current | ID | -1.37 | | | A | Steady state, TA = 25°C | 1 |+| Continuous Drain Current | ID | -0.62 | | | A | Steady state, TA = 70°C | 1 |+| Power Dissipation | PD | | | 0.329 | W | Steady state, TA = 25°C (Note 1) | 1 |+| Pulsed Drain Current | IDM | -4 | | | A | tp = 10 s | 1 |+| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode), Continuous | IS | -0.5 | | | A | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |+| Junction-to-Ambient Thermal Resistance, Steady State | RJA | | | 380 | °C/W | Steady state, surface-mounted on FR4, 1 in sq pad (Note 1) | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | -24.5 | | V | VGS = 0 V, ID = −250 A | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | A | VGS = 0 V, VDS = −16 V, TJ = 25°C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -5 | A | VGS = 0 V, VDS = −16 V, TJ = 70°C | 2 |+| Gate-to-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |+| Gate Threshold Voltage | VGS(TH) | -0.45 | -0.64 | -1.5 | V | VGS = VDS, ID = −250 A | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 83 | 120 | m | VGS = −4.5 V, ID = −1.0 A | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 88 | 130 | m | VGS = −3.6 V, ID = −0.7 A | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 104 | 160 | m | VGS = −2.5 V, ID = −0.3 A | 2 |+| Input Capacitance | CISS | | 603 | 840 | pF | VGS = 0 V, f = 1.0 MHz, VDS = −20 V | 2 |+| Output Capacitance | COSS | | 90 | 125 | pF | VGS = 0 V, f = 1.0 MHz, VDS = −20 V | 2 |+| Reverse Transfer Capacitance | CRSS | | 62 | 85 | pF | VGS = 0 V, f = 1.0 MHz, VDS = −20 V | 2 |+| Total Gate Charge | QG(TOT) | | 6.4 | 9 | nC | VGS = −4.5 V, VDS = −4.5 V, ID = −1.0 A | 2 |+| Turn-On Delay Time | td(ON) | | 6.2 | 12 | ns | VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 | 2 |+| Rise Time | tr | | 14.9 | 25 | ns | VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 | 2 |+| Turn-Off Delay Time | td(OFF) | | 26 | 40 | ns | VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 | 2 |+| Fall Time | tf | | 18 | 30 | ns | VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 | 2 |+| Forward Diode Voltage | VSD | | -0.61 | -1.2 | V | VGS = 0 V, IS = −0.3 A, TJ = 25°C | 2 |+| Reverse Recovery Time | tRR | | 10.9 | 20 | ns | VGS = 0 V, dISD/dt = 100 A/s, IS = −1.0 A | 2 |+ ## CAD (KiCad official) - Symbol: `NTS4101PT1G`
page.json+344−1@@ -150,6 +150,349 @@ "Package": "SOT-323", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f141ab1ad5d5d5e2",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.37,+ "typ": null,+ "max": null,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -0.62,+ "typ": null,+ "max": null,+ "conditions": "Steady state, TA = 70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.329,+ "conditions": "Steady state, TA = 25°C (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4,+ "typ": null,+ "max": null,+ "conditions": "tp = 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode), Continuous",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -0.5,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, Steady State",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 380,+ "conditions": "Steady state, surface-mounted on FR4, 1 in sq pad (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": -24.5,+ "max": null,+ "conditions": "VGS = 0 V, ID = −250 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS = 0 V, VDS = −16 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VGS = 0 V, VDS = −16 V, TJ = 70°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±8 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.45,+ "typ": -0.64,+ "max": -1.5,+ "conditions": "VGS = VDS, ID = −250 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "m",+ "min": null,+ "typ": 83,+ "max": 120,+ "conditions": "VGS = −4.5 V, ID = −1.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "m",+ "min": null,+ "typ": 88,+ "max": 130,+ "conditions": "VGS = −3.6 V, ID = −0.7 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "m",+ "min": null,+ "typ": 104,+ "max": 160,+ "conditions": "VGS = −2.5 V, ID = −0.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 603,+ "max": 840,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = −20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 90,+ "max": 125,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = −20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 62,+ "max": 85,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = −20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "QG(TOT)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6.4,+ "max": 9,+ "conditions": "VGS = −4.5 V, VDS = −4.5 V, ID = −1.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(ON)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6.2,+ "max": 12,+ "conditions": "VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 14.9,+ "max": 25,+ "conditions": "VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(OFF)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 26,+ "max": 40,+ "conditions": "VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 18,+ "max": 30,+ "conditions": "VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.61,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = −0.3 A, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "tRR",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 10.9,+ "max": 20,+ "conditions": "VGS = 0 V, dISD/dt = 100 A/s, IS = −1.0 A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +534,4 @@ "visibility": { "public": true }-}+}