component
NTS4001NT1G
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| nts4001nt1g-etched.glb | 24d ago |
| nts4001nt1g-etched.step | 24d ago |
| nts4001nt1g-hero.glb | 24d ago |
| nts4001nt1g-hero.overlay.json | 24d ago |
| nts4001nt1g.glb | 24d ago |
| nts4001nt1g.kicad_mod | 24d ago |
| nts4001nt1g.kicad_sym | 24d ago |
| nts4001nt1g.lbr | 24d ago |
| nts4001nt1g.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
NTS4001NT1G
MSKSEMI · MOSFETs · SOT-323
NTS4001NT1G from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 0.8 to 1.6 V at ID=250 uA. |
| 2 | S | passive | Source; continuous source current is 300 mA max and pulsed source current is 600 mA max through the body diode. |
| 3 | D | passive | Drain; 30 V maximum drain-source voltage and 300 mA continuous drain current at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current - Continuous | ID | 300 | mA | TA=25℃ | 2 | ||
| Drain Current - Continuous | ID | 220 | mA | TA=70℃ | 2 | ||
| Drain Current - Pulsed | IDM | 1 | A | Repetitive rating, note 1 | 2 | ||
| Power Dissipation | PD | 313 | W | TC=25℃ | 2 | ||
| Power Dissipation - Derate above 25℃ | PD | 2.5 | Mw/℃ | Derate above 25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 400 | ℃/W | 3 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | 200 | A | VDS=30V, VGS=0V, TJ=50C | 3 | ||
| Drain-Source Leakage Current | IDSS | 400 | A | VDS=30V, VGS=0V, TJ=85C | 3 | ||
| Gate-Source Leakage Current | IGSS | -6 | 6 | A | VGS=±20V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1 | 1.5 | Ω | VGS=10V, ID=0.3A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.3 | 2.3 | Ω | VGS=4.5V, ID=0.2A | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.1 | 1.6 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current | IS | 300 | mA | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 600 | mA | 3 | |||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=0.2A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
NTS4001NT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
nts4001nt1g-etched.step/nts4001nt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nts4001nt1g.step/nts4001nt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
5f0a21b4566d5508, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).