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NTS2101PT1G-VB
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VBsemi Elec MOSFETs, SOT-323(SC-70). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTS2101PT1G-VB
VBsemi Elec · MOSFETs · SOT-323(SC-70)
NTS2101PT1G-VB from VBsemi Elec, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of -0.45 V to -1.5 V at ID = -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body-diode current is -0.4 A at TC = 25 °C. |
| 3 | D | passive | Drain; VDS maximum is -20 V and continuous drain current is -3.1 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-323(SC-70) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current | IDM | -6 | A | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -50 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 250 | 300 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 2 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 225 | 270 | °C/W | Steady State | 2 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | -1.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = - 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -2 | A | VDS ≤ - 5 V, VGS = - 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.08 | Ω | VGS = - 4.5 V, ID = - 1.4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.1 | Ω | VGS = - 2.5 V, ID = - 1.2 A | 2 | ||
| Total Gate Charge | Qg | 4.3 | 6.5 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 1.4 A | 2 | |
| Total Gate Charge | Qg | 2.7 | 4.1 | nC | VDS = - 10 V, VGS = - 2.5 V, ID = - 1.4 A | 2 | |
| Gate Resistance | Rg | 1.4 | 7 | 14 | Ω | f = 1 MHz | 2 |
| Rise Time | tr | 20 | 30 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 23 | 35 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 8 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 8 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 18 | 27 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 8 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 14 | ns | VDD = - 10 V, RL = 9.1 Ω, VGEN = - 8 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -2.4 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -6 | A | 2 | |||
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IF = - 0.7 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 18 | 27 | ns | IF = - 0.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 7 | 14 | nC | IF = - 0.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | -14 | mV/°C | ID = - 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | 2.4 | mV/°C | ID = - 250 µA | 2 | ||
| Forward Transconductance | gfs | 5 | S | VDS = - 5 V, ID = - 1.4 A | 2 | ||
| Input Capacitance | Ciss | 272 | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 55 | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 44 | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
NTS2101PT1G-VB - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
- 3D model files:
nts2101pt1g-vb-etched.step/nts2101pt1g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nts2101pt1g-vb.step/nts2101pt1g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
7bdf22803be5aafb, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).