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Contents

README

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NTR4502PT1G

onsemi · MOSFETs · SOT-23

NTR4502PT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET, with gate-to-source voltage rated at ±20 V (VGS).
2 Source passive Source of the P-channel MOSFET, with source current (body diode) rated at −1.25 A (IS).
3 Drain passive Drain of the P-channel MOSFET, with drain-to-source voltage rated at −30 V (VDSS) and continuous drain current of −1.13 A at TA = 25°C steady state (ID), or −1.95 A for t < 10 s.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Drain Current (continuous, Note 1) ID -1.95 A t < 10 s, TA = 25°C 1
Drain Current (Note 1) ID -1.56 A t < 10 s, TA = 70°C 1
Power Dissipation (Note 1) PD 1.25 W t < 10 s 1
Continuous Drain Current (Note 1) ID -1.13 A Steady State, TA = 25°C 1
Continuous Drain Current (Note 1) ID -0.9 A Steady State, TA = 70°C 1
Power Dissipation (Note 1) PD 0.4 W Steady State 1
Pulsed Drain Current IDM -6.8 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS -1.25 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Thermal Resistance RJA 300 °C/W Steady State (Note 1) 1
Junction-to-Ambient Thermal Resistance RJA 100 °C/W t = 10 s (Note 1) 1
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0 V, ID = −250 A 2
Zero Gate Voltage Drain Current IDSS -1 A VGS = 0 V, VDS = −30 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS -10 A VGS = 0 V, VDS = −30 V, TJ = 55°C 2
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate Threshold Voltage VGS(TH) -1 -3 V VGS = VDS, ID = −250 A 2
Drain-to-Source On Resistance RDS(on) 155 200 m VGS = −10 V, ID = −1.95 A 2
Drain-to-Source On Resistance RDS(on) 240 350 m VGS = −4.5 V, ID = −1.5 A 2
Total Gate Charge QG(TOT) 6 10 nC VGS = −10 V, VDS = −15 V; ID = −1.95 A 2
Turn-On Delay Time td(ON) 5.2 10 ns VGS = −10 V, VDD = −15 V, ID = −1.95 A, RG = 6 2
Rise Time tr 12 20 ns VGS = −10 V, VDD = −15 V, ID = −1.95 A, RG = 6 2
Turn-Off Delay Time td(OFF) 19 35 ns VGS = −10 V, VDD = −15 V, ID = −1.95 A, RG = 6 2
Fall Time tf 17.5 30 ns VGS = −10 V, VDD = −15 V, ID = −1.95 A, RG = 6 2
Forward Diode Voltage VSD -0.8 -1.2 V VGS = 0 V, IS = −1.25 A 2

CAD (KiCad official)

  • Symbol: NTR4502PT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr4502pt1g-etched.step / ntr4502pt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr4502pt1g.step / ntr4502pt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 9def1c3c9b65b6c2, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF