component

NTR4501NT1G-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsntr4501nt1g-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

NTR4501NT1G-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

NTR4501NT1G-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is limited to ±12 V (VGS) per the absolute maximum ratings.
2 S passive Source terminal; continuous source-drain diode current is 1.75 A at TC = 25 °C.
3 D passive Drain terminal; drain-source voltage is limited to 20 V and continuous drain current is 6 A (package limited) at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 5.1 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 5 A Tb,A = 25 °C 1
Continuous Drain Current ID 4 A Tb,A = 70 °C 1
Pulsed Drain Current IDM 20 A 1
Continuous Source-Drain Diode Current IS 1.75 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.04 A Tb,A = 25 °C 1
Maximum Power Dissipation PD 2.1 W TC = 25 °C 1
Maximum Power Dissipation PD 1.3 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W Tb,A = 25 °C 1
Maximum Power Dissipation PD 0.8 W Tb,A = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 Peak temperature 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.45 1 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS ≤ 5 V, VGS = 4.5 V 2
Gate Resistance Rg 0.5 2.4 4.8 Ω f = 1 MHz 2
Total Gate Charge Qg 12 18 nC VDS = 10 V, VGS = 5 V, ID = 5.0 A 2
Total Gate Charge Qg 8.8 14 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Body Diode Reverse Recovery Time trr 12 20 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Voltage VSD 0.75 1.2 V IS = 4 A, VGS = 0 V 2
Turn-Off Delay Time td(off) 31 47 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 17 26 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 21 32 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Maximum Junction-to-Ambient RthJA 80 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 40 60 °C/W Steady state 1
Maximum Junction-to-Ambient RthJA 125 °C/W Steady state (note d) 1
Static Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 4.5 V, ID = 5.0 A 2
Static Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 2.5 V, ID = 4.7 A 2
Static Drain-Source On-State Resistance RDS(on) 0.039 Ω VGS = 1.8 V, ID = 4.3 A 2
Forward Transconductance gfs 24 S VDS = 10 V, ID = 5.0 A 2
Input Capacitance Ciss 865 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 105 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.1 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate-Drain Charge Qgd 0.7 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Pulse Diode Forward Current ISM 20 A 2
Reverse Recovery Fall Time ta 7 ns 2
Reverse Recovery Rise Time tb 5 ns 2
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/ΔTJ 25 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ -2.6 2

CAD (KiCad official)

  • Symbol: NTR4501NT1G-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: ntr4501nt1g-vb-etched.step / ntr4501nt1g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr4501nt1g-vb.step / ntr4501nt1g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 b3959e2d1bd4d6cf, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF