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NTR4003NT3G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTR4003NT3G

onsemi · MOSFETs · SOT-23

NTR4003NT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input ESD-protected gate with a Gate-to-Source voltage rating of ±20 V and a low gate threshold voltage to ease drive circuit design.
2 Source passive Source terminal of the N-channel MOSFET; the body diode source current is rated at 1.0 A maximum.
3 Drain passive Drain terminal of the N-channel MOSFET; the device is rated for a 30 V drain-to-source voltage and 0.56 A continuous drain current (t < 10 s, TA = 25°C).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (steady state) ID 0.5 A Steady State, TA = 25°C 1
Continuous Drain Current (steady state) ID 0.37 A Steady State, TA = 85°C 1
Power Dissipation (steady state) PD 0.69 W Steady State 1
Continuous Drain Current (t < 10 s) ID 0.56 A t < 10 s, TA = 25°C 1
Continuous Drain Current (t < 10 s) ID 0.4 A t < 10 s, TA = 85°C 1
Power Dissipation (t < 5 s) PD 0.83 W t < 5 s 1
Pulsed Drain Current IDM 1.7 A tp = 10 s (as extracted) 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Source Current (Body Diode) IS 1 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Thermal Resistance (steady state, 1 in sq pad) RJA 180 °C/W Steady State, Note 1 1
Junction-to-Ambient Thermal Resistance (t < 10 s) RJA 150 °C/W t < 10 s, Note 1 1
Junction-to-Ambient Thermal Resistance (steady state, minimum pad) RJA 300 °C/W Steady State, Note 2 1
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 100 A 2
Zero Gate Voltage Drain Current IDSS 1 A VGS = 0 V, VDS = 30 V, TJ = 25°C 2
Gate-to-Source Leakage Current IGSS -1 1 A VDS = 0 V, VGS = ±10 V 2
Gate Threshold Voltage VGS(TH) 0.8 1.4 V VGS = VDS, ID = 250 A 2
Drain-to-Source On Resistance RDS(on) 1 1.5 VGS = 4.0 V, ID = 10 mA 2
Drain-to-Source On Resistance RDS(on) 1.5 2 VGS = 2.5 V, ID = 10 mA 2
Input Capacitance Ciss 21 42 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 2
Output Capacitance Coss 19.7 40 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 2
Reverse Transfer Capacitance Crss 8.1 16 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 2
Forward Diode Voltage VSD 0.65 0.7 V VGS = 0 V, IS = 10 mA, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NTR4003NT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr4003nt3g-etched.step / ntr4003nt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr4003nt3g.step / ntr4003nt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 f06804ec79e6b035, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF