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NTR2101PT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTR2101PT1G

onsemi · MOSFETs · SOT-23

NTR2101PT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET; the datasheet limits gate-to-source voltage VGS to ±8.0 V.
2 Source passive Source terminal of the P-channel MOSFET; the body diode source current IS is limited to −1.2 A.
3 Drain passive Drain terminal of the P-channel MOSFET; the datasheet rates drain-to-source voltage VDSS at −8.0 V and continuous drain current ID at −3.7 A (t ≤ 5 s, TA = 25°C).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -8 V 1
Gate-to-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -3.7 A t ≤ 5 s, TA = 25°C 1
Continuous Drain Current ID -3 A t ≤ 5 s, TA = 70°C 1
Power Dissipation PD 0.96 W t ≤ 5 s 1
Pulsed Drain Current IDM -11 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS -1.2 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Steady State RθJA 160 °C/W Steady state, surface mounted on FR4, 1 in sq pad 1
Junction-to-Ambient t ≤ 5 s RθJA 130 °C/W t ≤ 5 s 1
Drain-to-Source Breakdown Voltage V(BR)DSS -8 V VGS = 0 V, ID = −250 A 2
Zero Gate Voltage Drain Current, TJ = 25°C IDSS -1 µA VGS = 0 V, VDS = −6.4 V, TJ = 25°C 2
Zero Gate Voltage Drain Current, TJ = 125°C IDSS -100 µA VGS = 0 V, VDS = −6.4 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±8.0 V 2
Gate Threshold Voltage VGS(TH) -0.4 -1 V VGS = VDS, ID = −250 A 2
Drain-to-Source On Resistance RDS(on) 39 52 mΩ VGS = −4.5 V, ID = −3.5 A 2
Drain-to-Source On Resistance RDS(on) 52 72 mΩ VGS = −2.5 V, ID = −3.0 A 2
Drain-to-Source On Resistance RDS(on) 79 120 mΩ VGS = −1.8 V, ID = −2.0 A 2
Total Gate Charge QG(TOT) 12 15 nC VGS = −4.5 V, VDS = −4.0 V, ID = −3.5 A 2
Turn-On Delay Time td(on) 7.4 15 ns VGS = −4.5 V, VDD = −4.0 V, ID = −1.2 A, RG = 6.0 2
Rise Time tr 15.75 25 ns VGS = −4.5 V, VDD = −4.0 V, ID = −1.2 A, RG = 6.0 2
Turn-Off Delay Time td(off) 38 58 ns VGS = −4.5 V, VDD = −4.0 V, ID = −1.2 A, RG = 6.0 2
Fall Time tf 31 51 ns VGS = −4.5 V, VDD = −4.0 V, ID = −1.2 A, RG = 6.0 2
Forward Diode Voltage VSD -0.73 -1.2 V VGS = 0 V, IS = −1.2 A, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NTR2101PT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr2101pt1g-etched.step / ntr2101pt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr2101pt1g.step / ntr2101pt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 5d7ceb31cc29a530, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF