component
NTR2101PT1G-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTR2101PT1G-MS
MSKSEMI · MOSFETs · SOT-23
NTR2101PT1G-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±12 V and a gate threshold of -0.3 to -1.0 V. |
| 2 | S | passive | Source of the P-channel MOSFET, with a continuous source current of -2.0 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, with a drain-source voltage rating of -18 V and a continuous drain current of -2.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Thermal Resistance Junction to ambient | RθJA | 400 | ℃/W | 2 | |||
| Drain-Source Voltage | VDS | -18 | V | TA=25℃ | 2 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 2 | |
| Drain Current, Continuous | ID | -2 | A | TC=25℃ | 2 | ||
| Drain Current, Continuous | ID | -0.95 | A | TC=100℃ | 2 | ||
| Drain Current, Pulsed | IDM | -8 | A | TA=25℃ | 2 | ||
| Power Dissipation | PD | 312 | mW | TC=25℃ | 2 | ||
| Power Dissipation, Derate above 25℃ | PD | 2.5 | mW/℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -18 | V | VGS=0V , ID=-250uA | 3 | ||
| BVDSS Temperature Coefficient | BVDSS TJ | -0.01 | V/℃ | Reference to 25℃ , ID=-1mA | 3 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-18V , VGS=0V , TJ=25 | 3 | ||
| Drain-Source Leakage Current | IDSS | -10 | uA | VDS=-16V , VGS=0V , TJ=125 | 3 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS 12V , VDS=0V | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 60 | 110 | mΩ | VGS=-4.5V , ID=-2A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 135 | mΩ | VGS=-2.5V , ID=-1A | 3 | |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.6 | -1 | V | VGS=VDS , ID =-250uA | 3 |
| VGS(th) Temperature Coefficient | VGS(th) | 3 | mV/℃ | 3 | |||
| Forward Transconductance | gfs | 2.2 | S | VDS=-10V , IS=-1A | 3 | ||
| Total Gate Charge | Qg | 4.8 | 8 | nC | VDS=-10V , VGS=-4.5V , ID=-1A | 3 | |
| Gate-Source Charge | Qgs | 0.5 | 1 | nC | VDS=-10V , VGS=-4.5V , ID=-1A | 3 | |
| Gate-Drain Charge | Qgd | 1.9 | 4 | nC | VDS=-10V , VGS=-4.5V , ID=-1A | 3 | |
| Turn-On Delay Time | Td(on) | 3.5 | 7 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | |
| Rise Time | Tr | 12.6 | 24 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | |
| Turn-Off Delay Time | Td(off) | 32.6 | 62 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | |
| Fall Time | Tf | 8.4 | 16 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 | |
| Input Capacitance | Ciss | 350 | 510 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 | |
| Output Capacitance | Coss | 65 | 95 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 50 | 75 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 | |
| Continuous Source Current | IS | -2 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Source Current | ISM | -4 | A | VG=VD=0V , Force Current | 3 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
NTR2101PT1G-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ntr2101pt1g-ms-etched.step/ntr2101pt1g-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntr2101pt1g-ms.step/ntr2101pt1g-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
0373b2acde9b4266, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTR2101PT1G-MS
**MSKSEMI** · MOSFETs · SOT-23
NTR2101PT1G-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±12 V and a gate threshold of -0.3 to -1.0 V. |
| 2 | S | passive | Source of the P-channel MOSFET, with a continuous source current of -2.0 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, with a drain-source voltage rating of -18 V and a continuous drain current of -2.0 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Thermal Resistance Junction to ambient | RθJA | | | 400 | ℃/W | | 2 |
| Drain-Source Voltage | VDS | | | -18 | V | TA=25℃ | 2 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | TA=25℃ | 2 |
| Drain Current, Continuous | ID | | | -2 | A | TC=25℃ | 2 |
| Drain Current, Continuous | ID | | | -0.95 | A | TC=100℃ | 2 |
| Drain Current, Pulsed | IDM | | | -8 | A | TA=25℃ | 2 |
| Power Dissipation | PD | | | 312 | mW | TC=25℃ | 2 |
| Power Dissipation, Derate above 25℃ | PD | | | 2.5 | mW/℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -18 | | | V | VGS=0V , ID=-250uA | 3 |
| BVDSS Temperature Coefficient | BVDSS TJ | | -0.01 | | V/℃ | Reference to 25℃ , ID=-1mA | 3 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-18V , VGS=0V , TJ=25 | 3 |
| Drain-Source Leakage Current | IDSS | | | -10 | uA | VDS=-16V , VGS=0V , TJ=125 | 3 |
| Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS 12V , VDS=0V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 60 | 110 | mΩ | VGS=-4.5V , ID=-2A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 110 | 135 | mΩ | VGS=-2.5V , ID=-1A | 3 |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.6 | -1 | V | VGS=VDS , ID =-250uA | 3 |
| VGS(th) Temperature Coefficient | VGS(th) | | 3 | | mV/℃ | | 3 |
| Forward Transconductance | gfs | | 2.2 | | S | VDS=-10V , IS=-1A | 3 |
| Total Gate Charge | Qg | | 4.8 | 8 | nC | VDS=-10V , VGS=-4.5V , ID=-1A | 3 |
| Gate-Source Charge | Qgs | | 0.5 | 1 | nC | VDS=-10V , VGS=-4.5V , ID=-1A | 3 |
| Gate-Drain Charge | Qgd | | 1.9 | 4 | nC | VDS=-10V , VGS=-4.5V , ID=-1A | 3 |
| Turn-On Delay Time | Td(on) | | 3.5 | 7 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 |
| Rise Time | Tr | | 12.6 | 24 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 |
| Turn-Off Delay Time | Td(off) | | 32.6 | 62 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 |
| Fall Time | Tf | | 8.4 | 16 | ns | VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A | 3 |
| Input Capacitance | Ciss | | 350 | 510 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 |
| Output Capacitance | Coss | | 65 | 95 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 50 | 75 | pF | VDS=-15V , VGS=0V , F=1MHz | 3 |
| Continuous Source Current | IS | | | -2 | A | VG=VD=0V , Force Current | 3 |
| Pulsed Source Current | ISM | | | -4 | A | VG=VD=0V , Force Current | 3 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
## CAD (KiCad official)
- Symbol: `NTR2101PT1G-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ntr2101pt1g-ms-etched.step` / `ntr2101pt1g-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntr2101pt1g-ms.step` / `ntr2101pt1g-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](docs/ntr2101pt1g-ms-datasheet.pdf) (7 pp, sha256 `0373b2acde9b4266`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntr2101pt1g-ms-datasheet.pdf)