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Ray Publish 0.1.0 bc70365 16d ago

NTR2101PT1G-MS

MSKSEMI · MOSFETs · SOT-23

NTR2101PT1G-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a gate-source voltage rating of ±12 V and a gate threshold of -0.3 to -1.0 V.
2 S passive Source of the P-channel MOSFET, with a continuous source current of -2.0 A.
3 D passive Drain of the P-channel MOSFET, with a drain-source voltage rating of -18 V and a continuous drain current of -2.0 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Thermal Resistance Junction to ambient RθJA 400 ℃/W 2
Drain-Source Voltage VDS -18 V TA=25℃ 2
Gate-Source Voltage VGS -12 12 V TA=25℃ 2
Drain Current, Continuous ID -2 A TC=25℃ 2
Drain Current, Continuous ID -0.95 A TC=100℃ 2
Drain Current, Pulsed IDM -8 A TA=25℃ 2
Power Dissipation PD 312 mW TC=25℃ 2
Power Dissipation, Derate above 25℃ PD 2.5 mW/℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS -18 V VGS=0V , ID=-250uA 3
BVDSS Temperature Coefficient BVDSS TJ -0.01 V/℃ Reference to 25℃ , ID=-1mA 3
Drain-Source Leakage Current IDSS -1 uA VDS=-18V , VGS=0V , TJ=25 3
Drain-Source Leakage Current IDSS -10 uA VDS=-16V , VGS=0V , TJ=125 3
Gate-Source Leakage Current IGSS 100 nA VGS 12V , VDS=0V 3
Static Drain-Source On-Resistance RDS(ON) 60 110 mΩ VGS=-4.5V , ID=-2A 3
Static Drain-Source On-Resistance RDS(ON) 110 135 mΩ VGS=-2.5V , ID=-1A 3
Gate Threshold Voltage VGS(th) -0.3 -0.6 -1 V VGS=VDS , ID =-250uA 3
VGS(th) Temperature Coefficient VGS(th) 3 mV/℃ 3
Forward Transconductance gfs 2.2 S VDS=-10V , IS=-1A 3
Total Gate Charge Qg 4.8 8 nC VDS=-10V , VGS=-4.5V , ID=-1A 3
Gate-Source Charge Qgs 0.5 1 nC VDS=-10V , VGS=-4.5V , ID=-1A 3
Gate-Drain Charge Qgd 1.9 4 nC VDS=-10V , VGS=-4.5V , ID=-1A 3
Turn-On Delay Time Td(on) 3.5 7 ns VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A 3
Rise Time Tr 12.6 24 ns VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A 3
Turn-Off Delay Time Td(off) 32.6 62 ns VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A 3
Fall Time Tf 8.4 16 ns VDD=-10V , VGS=-4.5V , RG=25Ω ID=-1A 3
Input Capacitance Ciss 350 510 pF VDS=-15V , VGS=0V , F=1MHz 3
Output Capacitance Coss 65 95 pF VDS=-15V , VGS=0V , F=1MHz 3
Reverse Transfer Capacitance Crss 50 75 pF VDS=-15V , VGS=0V , F=1MHz 3
Continuous Source Current IS -2 A VG=VD=0V , Force Current 3
Pulsed Source Current ISM -4 A VG=VD=0V , Force Current 3
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 3

CAD (KiCad official)

  • Symbol: NTR2101PT1G-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr2101pt1g-ms-etched.step / ntr2101pt1g-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr2101pt1g-ms.step / ntr2101pt1g-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 0373b2acde9b4266, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF