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Contents

README

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NTR1P02LT3G

onsemi · MOSFETs · SOT-23

NTR1P02LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; the datasheet gives a continuous gate-to-source voltage rating of ±12 V.
2 Source passive Source of the P-channel MOSFET; the source-drain diode continuous current is rated at −0.6 A (pulsed ISM −0.75 A).
3 Drain passive Drain of the P-channel MOSFET; the datasheet rates drain-to-source voltage VDSS at −20 V and continuous drain current ID at −1.3 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -20 V 2
Gate-to-Source Voltage - Continuous VGS -12 12 V Continuous 2
Drain Current - Continuous ID -1.3 A TA = 25°C 2
Pulsed Drain Current IDM -4 A tp ≤ 10 s 2
Total Power Dissipation PD 400 mW TA = 25°C 2
Operating and Storage Temperature Range TJ, Tstg -55 150 °C 2
Maximum Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 2
Thermal Resistance - Junction-to-Ambient RJA 300 °C/W 2
Drain-to-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0 V, ID = −10 A 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS = −16 V, VGS = 0 V 3
Zero Gate Voltage Drain Current (TJ = 125°C) IDSS -10 µA VDS = −16 V, VGS = 0 V, TJ = 125°C 3
Gate-Body Leakage Current IGSS -100 100 nA VGS = ±12 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) -0.7 -1 -1.25 V VDS = VGS, ID = −250 A 3
Static Drain-to-Source On-Resistance rDS(on) 0.14 0.22 Ω VGS = −4.5 V, ID = −0.75 A 3
Static Drain-to-Source On-Resistance rDS(on) 0.2 0.35 Ω VGS = −2.5 V, ID = −0.5 A 3
Continuous Current (source-drain diode) IS -0.6 A 3
Pulsed Current (source-drain diode) ISM -0.75 A 3
Forward Voltage VSD -1 V VGS = 0 V, IS = −0.6 A 3
Input Capacitance Ciss 225 pF VDS = −5.0 V 3
Output Capacitance Coss 130 pF VDS = −5.0 V 3
Transfer Capacitance Crss 55 pF VDS = −5.0 V 3
Turn-On Delay Time td(on) 7 ns VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RL = 5.0, RG = 6.0 3
Rise Time tr 15 ns VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RL = 5.0, RG = 6.0 3
Turn-Off Delay Time td(off) 18 ns VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RL = 5.0, RG = 6.0 3
Fall Time tf 9 ns VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RL = 5.0, RG = 6.0 3
Total Gate Charge QT 3.1 nC VDS = −16 V, ID = −1.5 A, VGS = −4.5 V 3
Reverse Recovery Time trr 16 ns IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/s 3
Reverse Recovery Time (ta) ta 11 ns IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/s 3
Reverse Recovery Time (tb) tb 5.5 ns IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/s 3
Reverse Recovery Stored Charge QRR 8.5 nC 3

CAD (KiCad official)

  • Symbol: NTR1P02LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr1p02lt3g-etched.step / ntr1p02lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr1p02lt3g.step / ntr1p02lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 cb115518609e9e4e, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF