component
NTPF360N65S3H
Public Made by Adomby adom
onsemi MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTPF360N65S3H
onsemi · MOSFETs · TO-220F
NTPF360N65S3H from onsemi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-to-source voltage is rated at VGSS ±30 V DC (±30 V AC at f > 1 Hz). |
| 2 | D | passive | Drain terminal; the drain-to-source voltage is rated at VDSS 650 V, with continuous drain current of 10 A at TC = 25°C. |
| 3 | S | passive | Source terminal; the operating and storage temperature range is −55 to +150 °C, and the maximum lead temperature for soldering is 260 °C for 5 s. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 1 mA, TJ = 25C | 4 | ||
| Drain to Source Breakdown Voltage | BVDSS | 700 | V | VGS = 0 V, ID = 1 mA, TJ = 150C | 4 | ||
| Drain to Source Voltage | VDSS | 650 | V | 3 | |||
| Gate to Source Voltage DC | VGSS | -30 | 30 | V | DC | 3 | |
| Gate to Source Voltage AC | VGSS | -30 | 30 | V | AC (f > 1 Hz) | 3 | |
| Drain Current Continuous | ID | 10 | A | TC = 25°C; drain current limited by maximum junction temperature | 3 | ||
| Drain Current Continuous | ID | 6 | A | TC = 100°C | 3 | ||
| Drain Current Pulsed | IDM | 28 | A | Note 1 | 3 | ||
| Single Pulsed Avalanche Energy | EAS | 75 | mJ | Note 2 | 3 | ||
| Avalanche Current | IAS | 1.9 | A | Note 2 | 3 | ||
| Repetitive Avalanche Energy | EAR | 0.83 | mJ | Note 1 | 3 | ||
| MOSFET dv/dt | dv/dt | 120 | V/ns | 3 | |||
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | Note 3 | 3 | ||
| Power Dissipation | PD | 26 | W | TC = 25°C | 3 | ||
| Derate Above 25°C | 0.21 | W/°C | Derate above 25°C | 3 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 3 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | °C | 1/8 in from case for 5 s | 3 | ||
| Thermal Resistance, Junction to Case | RθJC | 4.71 | C/W | Max. | 3 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | C/W | Max. | 3 | ||
| Drain to Source Leakage Current | IDSS | 1 | A | VDS = 650 V, VGS = 0 V | 4 | ||
| Drain to Source Leakage Current | IDSS | 2.6 | A | VDS = 520 V, TC = 125C | 4 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30 V, VDS = 0 V | 4 | |
| Gate Threshold Voltage | VGS(th) | 2.4 | 4 | V | VGS = VDS, ID = 0.7 mA | 4 | |
| Static Drain to Source On Resistance | RDS(on) | 296 | 360 | m | VGS = 10 V, ID = 5.0 A | 4 | |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | 0.63 | V/C | ID = 10 mA, referenced to 25C | 4 | ||
| Forward Transconductance | gFS | 11.2 | S | VDS = 20 V, ID = 5.0 A | 4 | ||
| Input Capacitance | Ciss | 916 | pF | VDS = 400 V, VGS = 0 V, f = 250 kHz | 4 | ||
| Output Capacitance | Coss | 15 | pF | 4 | |||
| Effective Output Capacitance | Coss(eff.) | 180 | pF | VDS = 0 V to 400 V, VGS = 0 V | 4 | ||
| Energy Related Output Capacitance | Coss(er.) | 24 | pF | VDS = 0 V to 400 V, VGS = 0 V | 4 | ||
| Total Gate Charge at 10 V | Qg(tot) | 17.5 | nC | VDS = 400 V, ID = 5.0 A, VGS = 10 V | 4 | ||
| Gate to Source Gate Charge | Qgs | 4.3 | nC | 4 | |||
| Gate to Drain Miller Charge | Qgd | 5 | nC | 4 | |||
| Equivalent Series Resistance | ESR | 0.9 | f = 1 MHz | 4 | |||
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 400 V, ID = 5.0 A, VGS = 10 V, Rg = 12 Ω | 4 | ||
| Turn-On Rise Time | tr | 6.7 | ns | VDD = 400 V, ID = 5.0 A, VGS = 10 V, Rg = 12 Ω | 4 | ||
| Turn-Off Delay Time | td(off) | 45 | ns | VDD = 400 V, ID = 5.0 A, VGS = 10 V, Rg = 12 Ω | 4 | ||
| Turn-Off Fall Time | tf | 7 | ns | VDD = 400 V, ID = 5.0 A, VGS = 10 V, Rg = 12 Ω | 4 | ||
| Maximum Continuous Source to Drain Diode Forward Current | IS | 10 | A | 4 | |||
| Maximum Pulsed Source to Drain Diode Forward Current | ISM | 28 | A | 4 | |||
| Source to Drain Diode Forward Voltage | VSD | 1.2 | V | VGS = 0 V, ISD = 5.0 A | 4 | ||
| Reverse Recovery Time | trr | 204 | ns | VDD = 400 V, ISD = 5.0 A, dIF/dt = 100 A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 1.9 | C | 4 |
CAD (KiCad official)
- Symbol:
NTPF360N65S3H - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
57aed0d1e6c17827, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).