component
NTP30N06LG-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTP30N06LG-VB
VBsemi Elec · MOSFETs · TO-220AB
NTP30N06LG-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is rated ±20 V, and VGS = 5 V is used for logic-level devices, with VGS = 10 V giving the specified RDS(on) of 0.024 Ω. |
| 2 | D | passive | Drain-source voltage is rated 60 V, with continuous drain current of 50 A at TC = 25 °C, limited by the package (die current 51 A). |
| 3 | S | passive | Source is the MOSFET source terminal; continuous source-drain diode current is 50 A and pulsed diode forward current is 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 36 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 150 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB Mount) | PD | 3.7 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 4.5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB Mount) | RthJA | 40 | °C/W | PCB mount | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 10 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 23 | S | VDS = 25 V, ID = 21 A | 2 | ||
| Total Gate Charge | Qg | 66 | nC | ID = 51 A, VDS = 48 V, VGS = 5.0 V | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | ID = 51 A, VDS = 48 V, VGS = 5.0 V | 2 | ||
| Gate-Drain Charge | Qgd | 43 | nC | ID = 51 A, VDS = 48 V, VGS = 5.0 V | 2 | ||
| Continuous Source-Drain Diode Current | IS | 50 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 200 | A | 2 | |||
| Body Diode Voltage | VSD | 2.5 | V | TJ = 25 °C, IS = 51 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 130 | 180 | ns | TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.84 | 1.3 | μC | TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.024 | Ω | VGS = 10 V, ID = 21 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.028 | Ω | VGS = 4.5 V, ID = 15 A | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | 0.07 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Input Capacitance | Ciss | 190 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 17 | ns | VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω | 2 | ||
| Rise Time | tr | 230 | ns | VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω | 2 | ||
| Fall Time | tf | 110 | ns | VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 | |||
| Linear Derating Factor | 1 | W/°C | 1 | ||||
| Linear Derating Factor (PCB Mount) | 0.025 | W/°C | 1 |
CAD (KiCad official)
- Symbol:
NTP30N06LG-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
ntp30n06lg-vb-etched.step/ntp30n06lg-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntp30n06lg-vb.step/ntp30n06lg-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
c7502e4fb3a46ccf, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).