NTMFS6B14NT3G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the N-channel MOSFET, pin 1 marked by the dot on the package.
2	S	passive	Source terminal of the N-channel MOSFET.
3	S	passive	Source terminal of the N-channel MOSFET.
4	G	input	Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
5	D	passive	Drain terminal of the 100 V N-channel MOSFET.
6	D	passive	Drain terminal of the 100 V N-channel MOSFET.
7	D	passive	Drain terminal of the 100 V N-channel MOSFET.
8	D	passive	Drain terminal of the 100 V N-channel MOSFET.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	DFN5x6-8
Category	Transistors/Thyristors
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current (TJ = 175 °C), TC = 100 °C	ID			20	A	TJ = 175 °C; TC = 100 °C	1
Pulsed Drain Current	IDM			90	A		1
Continuous Source Current (Diode Conduction)	IS			110	A		1
Avalanche Current	IAS			50	A		1
Single Avalanche Energy	EAS			110	mJ	L = 0.1 mH; duty cycle 1 %	1
Maximum Power Dissipation	PD			136	W	TC = 25 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Maximum Junction-to-Ambient	RthJA		15	18	°C/W	t ≤ 10 s	1
Maximum Junction-to-Ambient	RthJA		40	50	°C/W	Steady State	1
Maximum Junction-to-Case	RthJC		0.85	1.1	°C/W		1
Drain-Source Breakdown Voltage	VDS	100			V	VGS = 0 V, ID = 250 µA	2
Gate-Body Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ±20 V	2
Zero Gate Voltage Drain Current	IDSS			50	µA	VDS = 30 V, VGS = 0 V, TJ = 125 °C	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 30 V, VGS = 0 V, TJ = 175 °C	2
On-State Drain Current	ID(on)	60			A	VDS = 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.021	Ω	VGS = 10 V, ID = 20 A	2
Drain-Source On-State Resistance	RDS(on)			0.008	Ω	VGS = 10 V, ID = 20 A, TJ = 125 °C	2
Drain-Source On-State Resistance	RDS(on)			0.01	Ω	VGS = 10 V, ID = 20 A, TJ = 175 °C	2
Forward Transconductance	gfs	60			S	VDS = 15 V, ID = 20 A	2
Total Gate Charge	Qg		55	70	nC	VDS = 100 V, VGS = 10 V, ID = 50 A	2
Turn-On Delay Time	td(on)		15	24	ns	VDD = 100 V, RL = 0.6, ID = 50 A, VGEN = 10 V, Rg = 2.5	2
Rise Time	tr		15	25	ns	VDD = 100 V, RL = 0.6, ID = 50 A, VGEN = 10 V, Rg = 2.5	2
Turn-Off Delay Time	td(off)		35	50	ns	VDD = 100 V, RL = 0.6, ID = 50 A, VGEN = 10 V, Rg = 2.5	2
Fall Time	tf		20	30	ns	VDD = 100 V, RL = 0.6, ID = 50 A, VGEN = 10 V, Rg = 2.5	2
Pulsed Current	ISM			90	A		2
Diode Forward Voltage	VSD			11.5	V	IF = 20 A, VGS = 0 V	2
Reverse Recovery Time	trr			135	ns	IF = 20 A, di/dt = 100 A/µs	2

CAD (KiCad official)

Symbol: NTMFS6B14NT3G-VB
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: ntmfs6b14nt3g-vb-etched.step / ntmfs6b14nt3g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmfs6b14nt3g-vb.step / ntmfs6b14nt3g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 ea7d9d4aa17cbc64, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

NTMFS6B14NT3G-VB

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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