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NTMFS4C03N-HXY

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HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTMFS4C03N-HXY

HXY MOSFET · MOSFETs · DFN5X6-8L

NTMFS4C03N-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, with continuous source current IS rated 150A (package limit 85A).
2 S passive Source of the N-channel MOSFET, with continuous source current IS rated 150A (package limit 85A).
3 S passive Source of the N-channel MOSFET, with continuous source current IS rated 150A (package limit 85A).
4 G input Gate of the N-channel MOSFET, rated ±20V gate-source with threshold 1.2V to 2.5V.
5 D passive Drain of the N-channel MOSFET, rated 30V drain-source with pulsed drain current up to 160A.
6 D passive Drain of the N-channel MOSFET, rated 30V drain-source with pulsed drain current up to 160A.
7 D passive Drain of the N-channel MOSFET, rated 30V drain-source with pulsed drain current up to 160A.
8 D passive Drain of the N-channel MOSFET, rated 30V drain-source with pulsed drain current up to 160A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5X6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 150 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 80 A VGS @ 10V, TC=100℃ 1
Pulsed Drain Current IDM 160 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 180 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=60A 1
Avalanche Current IAS 60 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 187 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1 inch2 FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 1.1 ℃/W 1 inch2 FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.4 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 3.2 mΩ VGS=4.5V , ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 150 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: NTMFS4C03N-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ntmfs4c03n-hxy-etched.step / ntmfs4c03n-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmfs4c03n-hxy.step / ntmfs4c03n-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 477b4e7bce9847f0, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF