# NTMFS4C027N-HXY

**HXY MOSFET** · MOSFETs · DFN5x6-8L

NTMFS4C027N-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (VDS = 30V rated, ID = 60A continuous at TC=25℃ shared across source pins). |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, rated ±20V gate-source with threshold 1.2V to 2.5V at ID=250uA. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 30V drain-source, connected to the same drain node as pins 6-8. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to the same drain node as pins 5-7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.4 | 5.8 | mΩ | VGS=10V , ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 6.9 | 9 | mΩ | VGS=4.5V , ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 60 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 60 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 38 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 135 | A | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 29.8 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=24A | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 30 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 4.6 | ℃/W |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 50 | ℃/W |  | 1 |
| Forward Transconductance | gfs |  | 67 |  | S | VDS=5V , ID=20A | 2 |
| Gate Resistance | Rg |  | 1.7 |  | Ω | VDS=0V , VGS=0V , f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg |  | 8 |  | nC | VDS=15V , VGS=4.5V , ID=15A | 2 |
| Gate-Source Charge | Qgs |  | 2.4 |  | nC | VDS=15V , VGS=4.5V , ID=15A | 2 |
| Gate-Drain Charge | Qgd |  | 3.2 |  | nC | VDS=15V , VGS=4.5V , ID=15A | 2 |
| Turn-On Delay Time | Td(on) |  | 7.1 |  | ns | VDD=15V , VGS=10V , RG=3.3 , ID=15A | 2 |
| Rise Time | Tr |  | 40 |  | ns | VDD=15V , VGS=10V , RG=3.3 , ID=15A | 2 |
| Turn-Off Delay Time | Td(off) |  | 15 |  | ns | VDD=15V , VGS=10V , RG=3.3 , ID=15A | 2 |
| Fall Time | Tf |  | 6 |  | ns | VDD=15V , VGS=10V , RG=3.3 , ID=15A | 2 |
| Input Capacitance | Ciss |  | 814 |  | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss |  | 498 |  | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 41 |  | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Reverse Recovery Time | trr |  | 15 |  | nS | IF=20A , di/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 25 |  | nC | IF=20A , di/dt=100A/µs , TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `NTMFS4C027N-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `ntmfs4c027n-hxy-etched.step` / `ntmfs4c027n-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntmfs4c027n-hxy.step` / `ntmfs4c027n-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/ntmfs4c027n-hxy-datasheet.pdf) (6 pp, sha256 `2c24ba1bbdd3f464`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntmfs4c027n-hxy-datasheet.pdf)