component

NTMD4184PFR2G

Public Made by Adom

by adom

onsemi MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorntmd4184pfr2gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ntmd4184pfr2g / README.md
History Download
Ray Publish 0.1.0 c5ab993 12d ago

NTMD4184PFR2G

onsemi · MOSFETs · SOIC-8

NTMD4184PFR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Schottky diode anode, independent of the MOSFET pins (Style 18).
2 A passive Schottky diode anode, independent of the MOSFET pins (Style 18).
3 S passive P-channel MOSFET source (Style 18); VDSS rated -30 V.
4 G input P-channel MOSFET gate; VGS rated ±20 V maximum (Style 18).
5 D passive P-channel MOSFET drain (Style 18); continuous ID -3.3 A at TA = 25°C steady state.
6 D passive P-channel MOSFET drain (Style 18); continuous ID -3.3 A at TA = 25°C steady state.
7 C passive Schottky diode cathode (Style 18); VRRM and VR are 20 V.
8 C passive Schottky diode cathode (Style 18); VRRM and VR are 20 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -30 V MOSFET, TJ = 25°C 1
Gate-to-Source Voltage VGS -20 20 V MOSFET 1
Continuous Drain Current, steady state (Note 1) ID -3.3 A TA = 25°C 1
Continuous Drain Current, steady state (Note 1) ID -2.6 A TA = 70°C 1
Power Dissipation (Note 1) PD 1.6 W TA = 25°C, steady state 1
Continuous Drain Current (Note 2) ID -2.3 A TA = 25°C 1
Continuous Drain Current (Note 2) ID -1.8 A TA = 70°C 1
Power Dissipation (Note 2) PD 0.77 W TA = 25°C 1
Continuous Drain Current, t < 10 s (Note 1) ID -4 A TA = 25°C 1
Continuous Drain Current, t < 10 s (Note 1) ID -3.2 A TA = 70°C 1
Power Dissipation, t < 10 s (Note 1) PD 2.31 W TA = 25°C 1
Pulsed Drain Current IDM -10 A TA = 25°C, tp = 10 µs 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS -1.3 A 1
Lead Temperature for Soldering TL 260 °C 1/8" from case for 10 s 1
Schottky Peak Repetitive Reverse Voltage VRRM 20 V TJ = 25°C 1
Schottky DC Blocking Voltage VR 20 V TJ = 25°C 1
Schottky Average Rectified Forward Current (Note 1) IF 2.2 A Steady state 1
Schottky Average Rectified Forward Current (Note 1) IF 3.2 A t < 10 s 1
Junction-to-Ambient, Steady State (Note 1) RθJA 79 °C/W MOSFET & Schottky 2
Junction-to-Ambient, t ≤ 10 s (Note 1) RθJA 54 °C/W MOSFET & Schottky 2
Junction-to-Foot (Drain) RθJF 50 °C/W Equivalent to RθJC 2
Junction-to-Ambient, Steady State (Note 2) RθJA 163 °C/W MOSFET & Schottky 2
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VGS = 0 V, VDS = -24 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS -10 µA VGS = 0 V, VDS = -24 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate Threshold Voltage VGS(TH) -1 -3 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On Resistance RDS(on) 70 95 mΩ VGS = -10 V, ID = -3.0 A 2
Drain-to-Source On Resistance RDS(on) 120 165 mΩ VGS = -4.5 V, ID = -1.5 A 2
Input Capacitance CISS 280 360 pF VGS = 0 V, f = 1.0 MHz, VDS = -10 V 2
Output Capacitance COSS 80 110 pF VGS = 0 V, f = 1.0 MHz, VDS = -10 V 2
Reverse Transfer Capacitance CRSS 52 80 pF VGS = 0 V, f = 1.0 MHz, VDS = -10 V 2
Total Gate Charge QG(TOT) 2.8 4.2 nC VGS = -4.5 V, VDS = -10 V, ID = -3.0 A 2
Total Gate Charge QG(TOT) 5.8 8.8 nC VGS = -10 V, VDS = -10 V, ID = -3.0 A 2
Turn-On Delay Time td(ON) 7.2 15 ns VGS = -10 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 Ω 2
Rise Time tr 12 24 ns VGS = -10 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 Ω 2
Turn-Off Delay Time td(OFF) 18 36 ns VGS = -10 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 Ω 2
Fall Time tf 2.6 6 ns VGS = -10 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 Ω 2
Forward Diode Voltage VSD -0.8 -1 V VGS = 0 V, ID = -1.3 A, TJ = 25°C 2
Schottky Forward Voltage VF 0.43 0.5 V IF = 1.0 A, TJ = 25°C 3
Schottky Forward Voltage VF 0.35 0.39 V IF = 1.0 A, TJ = 125°C 3
Schottky Forward Voltage VF 0.5 0.58 V IF = 2.0 A, TJ = 25°C 3
Schottky Forward Voltage VF 0.45 0.53 V IF = 2.0 A, TJ = 125°C 3
Schottky Reverse Current IR 0.001 0.02 mA VR = 10 V, TJ = 25°C 3
Schottky Reverse Current IR 1.2 14 mA VR = 10 V, TJ = 125°C 3
Schottky Reverse Current IR 0.004 0.05 mA VR = 20 V, TJ = 25°C 3
Schottky Reverse Current IR 2 18 mA VR = 20 V, TJ = 125°C 3
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 30 mV/°C 2
Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.4 mV/°C 2
Forward Transconductance gFS 5 S VDS = -1.5 V, ID = -3.0 A 2
Reverse Recovery Charge QRR 7.4 nC VGS = 0 V, dIS/dt = 100 A/µs, IS = -1.3 A 2

CAD (KiCad official)

  • Symbol: NTMD4184PFR2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ntmd4184pfr2g-etched.step / ntmd4184pfr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmd4184pfr2g.step / ntmd4184pfr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 7d0fc7892e319c42, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF