component

NTMD3P03-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorntmd3p03-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers ntmd3p03-hxy: viewers · Ray 9d ago
ntmd3p03-hxy-etched.glb Publish 0.1.0 · Ray 9d ago
ntmd3p03-hxy-etched.step ntmd3p03-hxy: factory component page (tier=lcsc) · Ray 9d ago
ntmd3p03-hxy-hero.glb ntmd3p03-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
ntmd3p03-hxy-hero.overlay.json Publish 0.1.0 · Ray 9d ago
ntmd3p03-hxy.glb Publish 0.1.0 · Ray 9d ago
ntmd3p03-hxy.kicad_mod Publish 0.1.0 · Ray 9d ago
ntmd3p03-hxy.kicad_sym Publish 0.1.0 · Ray 9d ago
ntmd3p03-hxy.lbr Publish 0.1.0 · Ray 9d ago
ntmd3p03-hxy.step Publish 0.1.0 · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago

NTMD3P03-HXY

HXY MOSFET · MOSFETs · SOP-8

NTMD3P03-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of channel 1 (P-channel MOSFET), rated for VDS = -30 V and continuous drain current ID = -5.3 A.
2 G1 input Gate of channel 1, with gate-source voltage limited to ±20 V.
3 S2 passive Source of channel 2 (P-channel MOSFET), rated for VDS = -30 V and continuous drain current ID = -5.3 A.
4 G2 input Gate of channel 2, with gate-source voltage limited to ±20 V.
5 D2 passive Drain of channel 2, with drain-source voltage of -30 V and pulsed drain current of -20 A.
6 D2 passive Drain of channel 2 (second drain pin, internally tied to pin 5), with drain-source voltage of -30 V and pulsed drain current of -20 A.
7 D1 passive Drain of channel 1, with drain-source voltage of -30 V and pulsed drain current of -20 A.
8 D1 passive Drain of channel 1 (second drain pin, internally tied to pin 7), with drain-source voltage of -30 V and pulsed drain current of -20 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 35 42 mR VGS=-10V, ID=-5.3A 2
Drain-Source On-State Resistance RDS(ON) 70 85 mR VGS=-4.5V, ID=-4.2A 2
Forward Transconductance gFS 4 7 S VDS=-15V,ID=-4.5A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-5.3A 2
Drain-Source Voltage VDS -30 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25℃ unless otherwise noted 1
Drain Current-Continuous ID -5.3 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed IDM -20 A Repetitive rating, pulse width limited by maximum junction temperature (Note 1); TA=25℃ unless otherwise noted 1
Maximum Power Dissipation PD 2.6 W TA=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 49 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 1

CAD (KiCad official)

  • Symbol: NTMD3P03-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ntmd3p03-hxy-etched.step / ntmd3p03-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmd3p03-hxy.step / ntmd3p03-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 2d86971ac481b7d6, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF