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NTK3139PT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ntk3139pt1g.glb plain STEP: one free product with face colours (generated model was nested; tscircuit read it white) · Ray 17d ago
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package.json ntk3139pt1g: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json ntk3139pt1g: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md ntk3139pt1g: specified limits as data (metadata.characteristics, 41 rows from the datasheet) · Ray 17d ago

NTK3139PT1G

onsemi · MOSFETs · SOT-723

NTK3139PT1G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; the gate-to-source voltage is rated at ±6 V (VGS), and the device is specified for operation at low logic-level gate drive.
2 Source passive Source terminal of the P-channel MOSFET; the drain-to-source voltage is rated at −20 V (VDSS) with respect to this pin.
3 Drain passive Drain terminal of the P-channel MOSFET; continuous drain current is rated at −780 mA at TA = 25°C (steady state), with a pulsed drain current of −1.2 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0 V, ID = −250 A 2
Zero Gate Voltage Drain Current, TJ = 25°C IDSS -1 A VGS = 0 V, VDS = −16V, TJ = 25°C 2
Zero Gate Voltage Drain Current, TJ = 125°C IDSS -2 A VGS = 0 V, VDS = −16V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS -2 2 A VDS = 0 V, VGS = ±4.5 V 2
Gate Threshold Voltage VGS(TH) -0.45 -1.2 V VGS = VDS, ID = −250 A 2
Drain-to-Source On Resistance (VGS = −4.5 V, ID = −780 mA) RDS(on) 0.38 0.48 Ω VGS = −4.5 V, ID = −780 mA 2
Drain-to-Source On Resistance (VGS = −2.5 V, ID = −660 mA) RDS(on) 0.52 0.67 Ω VGS = −2.5 V, ID = −660 mA 2
Drain-to-Source On Resistance (VGS = −1.8 V, ID = −100 mA) RDS(on) 0.7 0.95 Ω VGS = −1.8 V, ID = −100 mA 2
Drain-to-Source On Resistance (VGS = −1.5 V, ID = −100 mA) RDS(on) 0.95 2.2 Ω VGS = −1.5 V, ID = −100 mA 2
Input Capacitance CISS 113 170 pF VGS = 0 V, f = 1 MHz, VDS = −16 V 2
Output Capacitance COSS 15 25 pF VGS = 0 V, f = 1 MHz, VDS = −16 V 2
Reverse Transfer Capacitance CRSS 9 15 pF VGS = 0 V, f = 1 MHz, VDS = −16 V 2
Forward Diode Voltage VSD -0.8 -1.2 V VGS = 0 V, IS = −350 mA, TJ = 25°C 2
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ -16.5 mV/°C ID = −250 A, Reference to 25°C 2
Negative Threshold Temperature Coefficient VGS(TH)/TJ 2.4 mV/°C 2
Gate Resistance RG 112 Ω TA = 25°C 2
Forward Transconductance gFS 1.2 S VDS = −10 V, ID = −540 mA 2
Turn On Delay Time td(ON) 9 ns VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 2
Rise Time tr 5.8 ns VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 2
Turn Off Delay Time td(OFF) 32.7 ns VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 2
Fall Time tf 20.3 ns VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 2
Reverse Recovery Time tRR 13.2 ns VGS = 0 V, dISD/dt = 100 A/s, IS = −1.0 A, VDD = −20 V 2
Charge Time ta 11.8 ns VGS = 0 V, dISD/dt = 100 A/s, IS = −1.0 A, VDD = −20 V 2
Discharge Time tb 1.4 ns VGS = 0 V, dISD/dt = 100 A/s, IS = −1.0 A, VDD = −20 V 2
Reverse Recovery Charge QRR 5 nC VGS = 0 V, dISD/dt = 100 A/s, IS = −1.0 A, VDD = −20 V 2
Drain-to-Source Voltage VDSS -20 V 1
Gate-to-Source Voltage VGS -6 6 V 1
Continuous Drain Current, steady state ID -780 mA Steady state, TA = 25°C (Note 1) 1
Continuous Drain Current, steady state ID -570 mA Steady state, TA = 85°C (Note 1) 1
Continuous Drain Current, t ≤ 5 s ID -870 mA t ≤ 5 s, TA = 25°C (Note 1) 1
Power Dissipation, steady state PD 450 mW Steady state, TA = 25°C (Note 1) 1
Power Dissipation, t ≤ 5 s PD 550 mW t ≤ 5 s (Note 1) 1
Continuous Drain Current, steady state (Note 2) ID -660 mA Steady state, TA = 25°C (Note 2) 1
Continuous Drain Current, steady state (Note 2) ID -480 mA Steady state, TA = 85°C (Note 2) 1
Power Dissipation (Note 2) PD 310 mW TA = 25°C (Note 2) 1
Pulsed Drain Current IDM -1.2 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient, Steady State (Note 3) RθJA 280 °C/W Steady state, 1 in sq pad on FR4 (Note 3) 2
Junction-to-Ambient, t = 5 s (Note 3) RθJA 228 °C/W t = 5 s, 1 in sq pad on FR4 (Note 3) 2
Junction-to-Ambient, Steady State Minimum Pad (Note 4) RθJA 400 °C/W Steady state, minimum recommended pad on FR4 (Note 4) 2

CAD (KiCad official)

  • Symbol: NTK3139PT1G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: ntk3139pt1g-etched.step / ntk3139pt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntk3139pt1g.step / ntk3139pt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 014f723b09f0c20f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF