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NTJD4105CT2G

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by adom

onsemi MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTJD4105CT2G

onsemi · MOSFETs · SOT-363

NTJD4105CT2G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the channel 1 MOSFET; the datasheet rates the N-channel VDSS at 20 V and the P-channel at -8.0 V but does not state which channel this pin belongs to.
2 G1 input Gate terminal of the channel 1 MOSFET, with a gate-to-source rating of ±12 V for N-channel and ±8.0 V for P-channel.
3 D2 passive Drain terminal of the channel 2 MOSFET, with continuous drain current of 0.63 A (N-channel) and -0.775 A (P-channel) at TA = 25°C based on RθJA.
4 S2 passive Source terminal of the channel 2 MOSFET, with the same pair ratings as the channel 1 source (N-channel VDSS 20 V, P-channel -8.0 V).
5 G2 input Gate terminal of the channel 2 MOSFET, with a gate-to-source rating of ±12 V for N-channel and ±8.0 V for P-channel.
6 D1 passive Drain terminal of the channel 1 MOSFET, with continuous drain current of 0.63 A (N-channel) and -0.775 A (P-channel) at TA = 25°C based on RθJA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage, N-Ch VDSS 20 V 1
Drain-to-Source Voltage, P-Ch VDSS -8 V 1
Gate-to-Source Voltage, N-Ch VGS -12 12 V 1
Gate-to-Source Voltage, P-Ch VGS -8 8 V 1
Continuous Drain Current, N-Ch (based on RJA) ID 0.63 A Steady state, TA = 25°C 1
Continuous Drain Current, N-Ch (based on RJA) ID 0.46 A Steady state, TA = 85°C 1
Continuous Drain Current, P-Ch (based on RJA) ID -0.775 A Steady state, TA = 25°C 1
Continuous Drain Current, P-Ch (based on RJA) ID -0.558 A Steady state, TA = 85°C 1
Continuous Drain Current, N-Ch (based on RJL) ID 0.91 A Steady state, TA = 25°C 1
Continuous Drain Current, N-Ch (based on RJL) ID 0.65 A Steady state, TA = 85°C 1
Continuous Drain Current, P-Ch (based on RJL) ID -1.1 A Steady state, TA = 25°C 1
Continuous Drain Current, P-Ch (based on RJL) ID -0.8 A Steady state, TA = 85°C 1
Pulsed Drain Current IDM -1.2 1.2 A tp ≤ 10 s 1
Power Dissipation (based on RJA) PD 0.27 W Steady state, TA = 25°C 1
Power Dissipation (based on RJA) PD 0.14 W Steady state, TA = 85°C 1
Power Dissipation (based on RJL) PD 0.55 W Steady state, TA = 25°C 1
Power Dissipation (based on RJL) PD 0.29 W Steady state, TA = 85°C 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode), N-Ch IS 0.63 A 1
Source Current (Body Diode), P-Ch IS -0.775 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Thermal Resistance, Steady State RθJA 400 460 °C/W Surface mounted on FR4, 1 oz Cu area 0.9523 in² (Note 1) 1
Junction-to-Lead (Drain) Thermal Resistance, Steady State RθJL 194 226 °C/W Steady state (Note 1) 1
Drain-to-Source Breakdown Voltage, N-Ch V(BR)DSS 20 27 V VGS = 0 V, ID = 250 µA 2
Drain-to-Source Breakdown Voltage, P-Ch V(BR)DSS -8 -10.5 V ID = -250 µA 2
Gate Threshold Voltage, N-Ch VGS(TH) 0.6 0.92 1.5 V VGS = VDS, ID = 250 µA 2
Gate Threshold Voltage, P-Ch VGS(TH) -0.45 -0.83 -1 V VGS = VDS, ID = -250 µA 2
Drain-to-Source On Resistance, N-Ch RDS(on) 0.29 0.375 Ω VGS = 4.5 V, ID = 0.63 A 2
Drain-to-Source On Resistance, P-Ch RDS(on) 0.22 0.3 Ω VGS = -4.5 V, ID = -0.57 A 2
Drain-to-Source On Resistance, N-Ch RDS(on) 0.36 0.445 Ω VGS = 2.5 V, ID = 0.40 A 2
Drain-to-Source On Resistance, P-Ch RDS(on) 0.32 0.46 Ω VGS = -2.5 V, ID = -0.48 A 2
Drain-to-Source On Resistance, P-Ch RDS(on) 0.51 0.9 Ω VGS = -1.8 V, ID = -0.20 A 2
Input Capacitance, N-Ch CISS 33 46 pF f = 1 MHz, VGS = 0 V, VDS = 20 V 2
Input Capacitance, P-Ch CISS 160 225 pF f = 1 MHz, VGS = 0 V, VDS = -8.0 V 2
Output Capacitance, N-Ch COSS 13 22 pF f = 1 MHz, VGS = 0 V, VDS = 20 V 2
Output Capacitance, P-Ch COSS 38 55 pF f = 1 MHz, VGS = 0 V, VDS = -8.0 V 2
Reverse Transfer Capacitance, N-Ch CRSS 2.8 5 pF f = 1 MHz, VGS = 0 V, VDS = 20 V 2
Reverse Transfer Capacitance, P-Ch CRSS 28 40 pF f = 1 MHz, VGS = 0 V, VDS = -8.0 V 2
Total Gate Charge, N-Ch QG(TOT) 1.3 3 nC VGS = 4.5 V, VDS = 10 V, ID = 0.7 A 2
Total Gate Charge, P-Ch QG(TOT) 2.2 4 nC VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A 2
Forward Diode Voltage, N-Ch VSD 0.76 1.1 V VGS = 0 V, TJ = 25°C, IS = 0.23 A 2
Forward Diode Voltage, P-Ch VSD 0.76 1.1 V VGS = 0 V, TJ = 25°C, IS = -0.23 A 2

CAD (KiCad official)

  • Symbol: NTJD4105CT2G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: ntjd4105ct2g-etched.step / ntjd4105ct2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntjd4105ct2g.step / ntjd4105ct2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 f3a806f5ec332925, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF